Abstract
We show that electrical degradation of a micron-sized FET device leads to a submicron structure with interesting transport properties. The conductance gate voltage characteristic of a degraded FET shows evidence for quantum effects in the form of a resonant-tunneling process which causes a peak-to-valley conductivity change by many orders of magnitude. Noise is observed from single trap states created by the electrical stress.
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© 1988 Springer-Verlag Berlin Heidelberg
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Koch, F., Bollu, M., Asenov, A. (1988). MOSFETs Under Electrical Stress — Degradation, Subthreshold Conduction, and Noise in a Submicron Structure. In: Heinrich, H., Bauer, G., Kuchar, F. (eds) Physics and Technology of Submicron Structures. Springer Series in Solid-State Sciences, vol 83. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-83431-8_23
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DOI: https://doi.org/10.1007/978-3-642-83431-8_23
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-83433-2
Online ISBN: 978-3-642-83431-8
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