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Transport Physics in Ultra-Submicron Devices

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Book cover Physics and Technology of Submicron Structures

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 83))

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Abstract

Technology is rapidly pushing to the fabrication of ULSI “chips”, in which individual devices have critical dimensions (e.g. gate lengths) well below 1 µm. Within the next decade or so, we will see the push to reduce these dimensions even further; to well below 0.1–0.2 µm. At this scale, many new and interesting effects, which are currently treated as only high order corrections, will begin to dominate the device performance. Several of these effects are tunneling, surface superlattices, ballistic transport, and quantum interference effects. In this paper, we will treat a few such effects, leaving to other papers in this volume the treatment of further effects. Finally, we treat the need to develop a conceptual non-equilibrium quantum transport theory to handle these problems in realistic device structures.

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© 1988 Springer-Verlag Berlin Heidelberg

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Ferry, D.K. (1988). Transport Physics in Ultra-Submicron Devices. In: Heinrich, H., Bauer, G., Kuchar, F. (eds) Physics and Technology of Submicron Structures. Springer Series in Solid-State Sciences, vol 83. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-83431-8_21

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  • DOI: https://doi.org/10.1007/978-3-642-83431-8_21

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-83433-2

  • Online ISBN: 978-3-642-83431-8

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