Passivation by Laser Annealing and Melting

  • Ian W. Boyd
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 3)

Abstract

Whilst Chap.4 deals with controlled passivation of surfaces in the solid phase, Chap.5 summarises the more extreme processing conditions that have been applied to the formation of oxides and nitrides. Two main regimes are described here. The first, laser annealing, involves oxygen or nitrogen implantation into the semiconductor, followed by laser induced melting and epitaxial regrowth of the disordered layer. An alternative method employs similar high intensity laser radiation to melt a thin layer of amorphous (or crystalline) material in the presence of e.g. oxygen. These novel non-equilibrium processing techniques have enabled film growth rates of more than mm/s to be achieved. This chapter also describes how surface cleaning can be performed by applying a succession of high intensity laser pulses to the material held in high vacuum.

Keywords

Laser Annealing RHEED Pattern Auger Electron Spectrum Nitrogen Implantation Bury Oxide Layer 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 5.1
    J.M. Fairfield, G.H. Schwuttke: Solid State Elect. 11, 1175 (1968)CrossRefADSGoogle Scholar
  2. 5.2
    M. Birnbaum, T.L. Stocker: J. Appl. Phys. 39, 6032 (1968)CrossRefADSGoogle Scholar
  3. 5.3
    J. Feinlab, J. de Neufville, S.C. Moss, S.R. Ovshinski: J. Appl. Phys. 18, 254 (1971)Google Scholar
  4. 5.4
    R.J. von Gutfield, P. Chandhari: J, Appl. Phys. 43, 4688 (1972)CrossRefADSGoogle Scholar
  5. 5.5
    Yu. A. Bykovskii, A.G. Dudoladov, V.P. Kozlenkov, P.A. Leont’ev: JEPT Lett. 20, 135 (1974)ADSGoogle Scholar
  6. 5.6
    A.A. Agasiev, A.K.H. Zeinally, V.M. Salmanov, V.I. Tagirov, K.Yu Karakurchi: Sov. Phys. Semicond. 9, 777 (1975)Google Scholar
  7. 5.7
    I.B. Khaibullin, E.I. Shtyrkov, M.M. Zaripov, M.F. Galyautdinov, R.M. Bajazitov: Paper No. 2061–74, deposited in Viniti, Moscow (1974) (in Russian)Google Scholar
  8. 5.8
    I.B. Khaibullin, E.I. Shtyrkov, M.M. Zaripov, R.M. Bayzitov, M.F. Galjanudinov: Rad. Eff. 36, 225 (1978) and references thereinCrossRefGoogle Scholar
  9. 5.9
    Energy Beam Solid Interactions and Transient Processing, ed. by D.K. Biegelsen, G. Rozgonyi, C.V. Shank (Materials Research Society, Pittsburgh 1984) and references thereinGoogle Scholar
  10. 5.10
    J.M. Poate, J.W. Mayer (eds.): Laser Annealing of Semiconductors (Academic, New York 1982)Google Scholar
  11. 5.11
    I.W. Boyd, J.I.B. Wilson: Nature 303, 481 (1983)CrossRefADSGoogle Scholar
  12. 5.12
    I.W. Boyd: Contemp. Phys. 24, 461 (1983)CrossRefADSGoogle Scholar
  13. 5.13
    A.G. Cullis: Rep. Prog. Phys. 48, 1156 (1986)Google Scholar
  14. 5.14
    G. Battaglin, G. Della Mea, A.V. Drigo, G. Foti, G.G. Bentini, M. Servidori: Phys. Stat. Sol. 49, 347 (1978)CrossRefADSGoogle Scholar
  15. 5.15
    P.L. Liu, R. Yen, N. Bloembergen, R.T. Hodgson: Appl. Phys. Lett. 34, 864 (1979)CrossRefADSGoogle Scholar
  16. 5.16
    R. Tsu, R. Hodgson, T.Y. Tan, J.E. Baglin: Phys. Rev. Lett. 42, 1356 (1979)CrossRefADSGoogle Scholar
  17. 5.17
    J.M. Liu, R. Yen, E.P. Donovan, N. Bloembergen, R.T. Hodgson, Appl. Phys. Lett. 38, 617 (1981)CrossRefADSGoogle Scholar
  18. 5.18
    A. Garulli, M. Servidori, I. Vecchi: J. Appl. Phys. D 13, L199 (1981)CrossRefGoogle Scholar
  19. 5.19
    I.W. Boyd: Appl. Phys. A 31, 71 (1983)CrossRefADSGoogle Scholar
  20. 5.20
    K. Hoh, H. Koyama, K. Uda, Y. Miura: Jpn. J. Appl. Phys. 19, L375 (1980)CrossRefADSGoogle Scholar
  21. 5.21
    G.G. Bentini, M. Berti, C. Cohen, A.V. Drigo, E. Jannitti, D. Pribat, J. Siejka: J. Physique 43, C1–229 (1982)Google Scholar
  22. 5.22
    T.E. Orlowski, H. Richter: Appl. Phys. Lett. 45, 241 (1984)CrossRefADSGoogle Scholar
  23. 5.23
    A. Cros, R. Salvan, J. Derrien: Appl. Phys. A 28, 241 (1982)CrossRefADSGoogle Scholar
  24. 5.24
    Y.S. Liu, S.W. Chiang, F. Bacon: Appl. Phys. Lett. 38, 1005 (1981)CrossRefADSGoogle Scholar
  25. 5.25
    Y.S. Liu, S.W. Chiang, W. Katz: In Laser and Electron Beam Interactions with Solids, ed. by B.R. Appleton, G.K. Celler (Elsevier, New York 1982)Google Scholar
  26. 5.26
    J.C.C. Tsai: In VLSI Technology, ed. by S.M. Sze (McGraw-Hill, London 1983)Google Scholar
  27. 5.27
    H. Hirata, K. Hoshikawa: Jpn. J. Appl. Phys. 19, 1573 (1980)CrossRefADSGoogle Scholar
  28. 5.28
    A.J. Schell-Sorokin, J.E. Demuth: Appl. Phys. A 39, 13 (1986)CrossRefADSGoogle Scholar
  29. 5.29
    D.M. Zehner, C.W. White, P. Heimann, F.J. Himpsel, D.E. Eastman: Phys. Rev. B 24, 4875 (1981)CrossRefADSGoogle Scholar
  30. 5.30
    J.E.M. Westendorp, Z. Wang, F.W. Saris: In Laser and Electron Beam Interactions with Solids, ed. by B.R. Appleton, G.K. Celler (North-Holland, New York 1981) p.255Google Scholar
  31. 5.31
    E. Fogarassy, C.W. White, D.H. Lowndes, J. Narayan: In Beam-Solid Interactions and Phase Transformations, ed. by H. Kurz, G.L. Olson, J.M. Poate (MRS, Pittburgh 1986) p.173Google Scholar
  32. 5.32
    G.G. Bentini, M. Berti, A.V. Drigo, E. Jannitti, C. Cohen, J. Siejka: In Laser Chemical Processing of Semiconductor Devices, ed. by F.A. Houle, T.F. Deutsch, R.M. Osgood (MRS, Pittsburgh 1984) p.126Google Scholar
  33. 5.33
    C. Cohen, J. Siejka, G.G. Bentini, M. Berti, L.F. Dona Dalle Rose, A.V. Drigo: In Dielectric Layers in Semiconductors: Novel Technologies, ed. by G.G. Bentini, E. Fogarassy, A. Golansk (Les Editions des Physique, Les Ulis 1986) p.197Google Scholar
  34. 5.34
    S.W. Chiang, Y.S. Liu, R.F. Reihl: In Laser and Electron Beam Solid Interactions and Materials Processing, ed. by J.F. Gibbons, L.D. Hess, T.W. Sigmon (Elsevier, New York 1981)Google Scholar
  35. 5.35
    L. Reimer: Transmission Electron Microscopy, 2nd ed., Springer Ser. Opt. Sci., Vol.36 (Springer, Berlin, Heidelberg 1987)Google Scholar
  36. 5.36
    E. Fogarassy, A. Slaoui, C. Fuchs: In Emerging Technologies for In-Situ Processing, ed. by D.J. Ehrlich, V.T. Nguyen (Nijhoff, Dordrecht 1987)Google Scholar
  37. 5.37
    C. W. White, D. Fathy, O.W. Holland: In Photon, Beam and Plasma Enhanced Processing, ed. by V.T. Nguyen, E.F. Krimmel, A. Golanski (Les Editions de Physique, Les Ulis 1987)Google Scholar
  38. 5.38
    See, e.g., R.F. Pinizzotto: In Ion Implantation and Ion Beam Processing of Materials, ed. by G.K. Hubler, O.W. Holland, C.R. Clayton, C.W. White (North Holland, New York 1984) p.265Google Scholar
  39. 5.39
    Yu.N. Molin, K.M. Salikhov, K.I. Zamaraev: Spin Exchange, Springer Ser. Chem. Phys., Vol.8 (Springer, Berlin, Heidelberg 1980)CrossRefGoogle Scholar
  40. 5.40
    K.L. Brower: Phys. Rev. B 26, 6040 (1982)CrossRefADSGoogle Scholar
  41. 5.41
    K. Murakami, H.Itoh, K.Takita, K. Musada: Appl. Phys. Lett. 45, 176 (1984)CrossRefADSGoogle Scholar
  42. 5.42
    H.J. Stein: J. Electrochem. Soc. 132, 668 (1985)CrossRefGoogle Scholar
  43. 5.43
    D.M. Zehner, C.W. White, G.W. Ownby: Appl. Phys. Lett. 36, 56 (1980)CrossRefADSGoogle Scholar
  44. 5.44
    P.L. Cowan, J.A. Golovchenko: J. Vac. Sci. Technol. 17, 1197 (1980)CrossRefADSGoogle Scholar
  45. 5.45
    I.W. Boyd: In Dielectric Layers in Semiconductors: Novel Technologies, ed. by G.G. Bentini, E. Fogarassy, A. Golanski (Les Editions des Physique, Les Ulis 1986) p.177Google Scholar

Recommendations for Further Reading

  1. Allmen M.v.: Laser-Beam Interactions with Materials, Springer Ser. Mat. Sci., Vol.2 (Springer, Berlin, Heidelberg 1987)Google Scholar
  2. Bäuerle D.: Chemical Processing with Lasers, Springer Ser. Mat. Sci., Vol.1 (Springer, Berlin, Heidelberg 1986)Google Scholar
  3. Biegelsen D.K., G. Rozgonyi, C.V. Shank (eds.): Energy-Beam Solid Interactions and Transient Thermal Processing (North-Holland, Amsterdam 1985)Google Scholar
  4. Donnelly V.M., I.P. Herman, M. Hlrose (eds.): Photon, Beam and Plasma Stimulated Chemical Processes at Surfaces (MRS, Pittsburgh 1987)Google Scholar
  5. Fan J.C.C, N.M. Johnson (eds.): Energy-Beam Solid Interactions and Transient Thermal Processing (Elsevier, New York 1984)Google Scholar
  6. Kurz H., G.L. Olson, J.M. Poate (eds.): Beam-Solid Interactions and Phase Transformations (MRS, Pittsburgh 1986)Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1987

Authors and Affiliations

  • Ian W. Boyd
    • 1
  1. 1.Department of Electronic and Electrical EngineeringUniversity College LondonLondonUK

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