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Scaling of the Integral Quantum Hall Effect

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Book cover High Magnetic Fields in Semiconductor Physics

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 71))

Abstract

A review is given of recent experiments testing the two-parameter scaling theory of the integral quantum Hall effect. The temperature driven flow diagram in the σXX(T) vs. σxy(T) of the two-dimensional electrons in InGaAs-InP, measured from 10K to 50mk, shows scaling behavior and is consistent with the theory.

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References

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Author information

Authors and Affiliations

  1. Department of Electrical Engineering, Princeton University, Princeton, NJ, 08544, USA

    H. P. Wei & D. C. Tsui

  2. AT&T Bell Laboratories, Murray Hill, NJ, 07974, USA

    M. A. Paalanen

  3. Pupin Physics Laboratory, Columbia University, New York, NY, 10027, USA

    A. M. M. Pruisken

Authors
  1. H. P. Wei
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  2. D. C. Tsui
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  3. M. A. Paalanen
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  4. A. M. M. Pruisken
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Editor information

Editors and Affiliations

  1. Physikalisches Institut, Universität Würzburg, Röntgenring 8, D-8700, Würzburg, Fed. Rep.of Germany

    Gottfried Landwehr

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© 1987 Springer-Verlag Berlin Heidelberg

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Wei, H.P., Tsui, D.C., Paalanen, M.A., Pruisken, A.M.M. (1987). Scaling of the Integral Quantum Hall Effect. In: Landwehr, G. (eds) High Magnetic Fields in Semiconductor Physics. Springer Series in Solid-State Sciences, vol 71. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-83114-0_2

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  • DOI: https://doi.org/10.1007/978-3-642-83114-0_2

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-83116-4

  • Online ISBN: 978-3-642-83114-0

  • eBook Packages: Springer Book Archive

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