Abstract
Charge transport in a GaAs n+-n-n+ submicron device is studied by applying the path variable method for solving the Boltzmann equation self-consistently with the Poisson equation. This allows the study of ballistic transport in the submicron structures where the charge density and thermal gradients are large.
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References
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© 1986 Springer-Verlag Berlin Heidelberg
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Kuivalainen, P., Lindberg, K. (1986). Application of the Integral Boltzmann Equation to the Hot Electron Problem in an Inhomogeneous Submicron Structure. In: Källbäck, B., Beneking, H. (eds) High-Speed Electronics. Springer Series in Electronics and Photonics, vol 22. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82979-6_8
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DOI: https://doi.org/10.1007/978-3-642-82979-6_8
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-82981-9
Online ISBN: 978-3-642-82979-6
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