GaAs-on-Insulator Structure Prepared by Heteroepitaxy of Fluorides and GaAs

  • T. Asano
  • K. Tsutsui
  • H. Ishiwara
  • S. Furukawa
Conference paper
Part of the Springer Series in Electronics and Photonics book series (SSEP, volume 22)

Abstract

GaAs-on-insulator(GaAs-SOI) structure has been prepared on Si or GaAs substrates by the molecular beam epitaxy of (Ca, Sr)F2 and GaAs. Microstructure of the GaAs films has been investigated by cross-sectional TEM. It has been found that microtwins and dislocations exist in the films on (100) oriented substrates, while only dislocations exist on (111) substrates. The origin of these defects is discussed and related to electrical properties of the GaAs films. MESFETs fabricated in the GaAs-SOI film have shown a gm value of about quarter of the value obtained from homoepitaxial GaAs.

Keywords

Fluoride GaAs 

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References

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Copyright information

© Springer-Verlag Berlin Heidelberg 1986

Authors and Affiliations

  • T. Asano
    • 1
  • K. Tsutsui
    • 1
  • H. Ishiwara
    • 1
  • S. Furukawa
    • 1
  1. 1.Graduate School of Science and EngineeringTokyo Institute of TechnologyMidoriku, Yokohama 227Japan

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