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High-Speed Electronics pp 177–181Cite as

GaAs-on-Insulator Structure Prepared by Heteroepitaxy of Fluorides and GaAs

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Part of the book series: Springer Series in Electronics and Photonics ((SSEP,volume 22))

Abstract

GaAs-on-insulator(GaAs-SOI) structure has been prepared on Si or GaAs substrates by the molecular beam epitaxy of (Ca, Sr)F2 and GaAs. Microstructure of the GaAs films has been investigated by cross-sectional TEM. It has been found that microtwins and dislocations exist in the films on (100) oriented substrates, while only dislocations exist on (111) substrates. The origin of these defects is discussed and related to electrical properties of the GaAs films. MESFETs fabricated in the GaAs-SOI film have shown a gm value of about quarter of the value obtained from homoepitaxial GaAs.

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References

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Author information

Authors and Affiliations

  1. Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuda, Midoriku, Yokohama 227, Japan

    T. Asano, K. Tsutsui, H. Ishiwara & S. Furukawa

Authors
  1. T. Asano
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  2. K. Tsutsui
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  3. H. Ishiwara
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  4. S. Furukawa
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Editor information

Editors and Affiliations

  1. RIFA AB, S-163 81, Stockholm, Sweden

    Bengt Källbäck

  2. Institut für Halbleitertechnik, Rhein.-Westf. Technische Hochschule, Sommerfeldstraße, D-5100, Aachen, Fed. Rep. of Germany

    Heinz Beneking

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© 1986 Springer-Verlag Berlin Heidelberg

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Asano, T., Tsutsui, K., Ishiwara, H., Furukawa, S. (1986). GaAs-on-Insulator Structure Prepared by Heteroepitaxy of Fluorides and GaAs. In: Källbäck, B., Beneking, H. (eds) High-Speed Electronics. Springer Series in Electronics and Photonics, vol 22. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82979-6_36

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  • DOI: https://doi.org/10.1007/978-3-642-82979-6_36

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-82981-9

  • Online ISBN: 978-3-642-82979-6

  • eBook Packages: Springer Book Archive

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