GaAs-on-Insulator Structure Prepared by Heteroepitaxy of Fluorides and GaAs
GaAs-on-insulator(GaAs-SOI) structure has been prepared on Si or GaAs substrates by the molecular beam epitaxy of (Ca, Sr)F2 and GaAs. Microstructure of the GaAs films has been investigated by cross-sectional TEM. It has been found that microtwins and dislocations exist in the films on (100) oriented substrates, while only dislocations exist on (111) substrates. The origin of these defects is discussed and related to electrical properties of the GaAs films. MESFETs fabricated in the GaAs-SOI film have shown a gm value of about quarter of the value obtained from homoepitaxial GaAs.
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