Abstract
We report on the first observations of hot electron effects in the gate current of GaAs-gate FET’s. We have made and tested a variety of these FET’s using MBE-grown material with 60nm and 35nm thick Al.4Ga.6As gate insulator layers. In measurements at 300K and 77K these devices show drain-voltage-dependent gate current substantially exceeding that which would be expected on the basis of simple vertical transport measurements. We attribute this current to the real-space transfer of hot electrons from the channel of the device into the (Al,Ga)As/GaAs barrier, from which they are collected into the gate.
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References
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© 1986 Springer-Verlag Berlin Heidelberg
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Frank, D.J., Solomon, P.M., La Tulipe, D.C., Baratte, H., Knoedler, C.M., Wright, S.L. (1986). Excess Gate Current Due to Hot Electrons in GaAs-Gate FETs. In: Källbäck, B., Beneking, H. (eds) High-Speed Electronics. Springer Series in Electronics and Photonics, vol 22. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82979-6_27
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DOI: https://doi.org/10.1007/978-3-642-82979-6_27
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-82981-9
Online ISBN: 978-3-642-82979-6
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