Acoustic Properties of n-Type Ge with Donor Pairs

  • T. Sota
  • K. Suzuki
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 68)

Abstract

In a semiconductor lightly doped with shallow donor impurities, donors are isolated and the system is simply a collection of noninteracting donor states which are described by the effective-mass theory. In the case of group V donors in Ge, the donor states consist of the singlet ground state and the triplet excited states which are energetically separated by the valley-orbit splitting 4Δ. The magnitude of 4Δ is sensitive to the species of impurities, i.e., 4Δ/kB=49 K (As), 33 K (P), and 3.7 K (Sb)/1/. Because of the donor states mentioned above, donors strongly interact with the low-frequency phonons.

Keywords

Attenuation 

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References

  1. 1.
    J. H. Reuszer and P. Fisher: Phys. Rev. 135, A1125 (1964)CrossRefADSGoogle Scholar
  2. 2.
    T. Takemori and H. Kamimura: J. Phys. C: Solid State Phys. 16, 5167 (1983)CrossRefADSGoogle Scholar
  3. 3.
    M. Kohno, K. Asano, and K. Suzuki: unpublishedGoogle Scholar
  4. 4.
    H. Sakurai and K. Suzuki: unpublishedGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1986

Authors and Affiliations

  • T. Sota
    • 1
  • K. Suzuki
    • 1
  1. 1.Department of Electrical EngineeringWaseda UniversityShinjuku, TokyoJapan

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