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Acoustic Properties of n-Type Ge with Donor Pairs

  • T. Sota
  • K. Suzuki
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 68)

Abstract

In a semiconductor lightly doped with shallow donor impurities, donors are isolated and the system is simply a collection of noninteracting donor states which are described by the effective-mass theory. In the case of group V donors in Ge, the donor states consist of the singlet ground state and the triplet excited states which are energetically separated by the valley-orbit splitting 4Δ. The magnitude of 4Δ is sensitive to the species of impurities, i.e., 4Δ/kB=49 K (As), 33 K (P), and 3.7 K (Sb)/1/. Because of the donor states mentioned above, donors strongly interact with the low-frequency phonons.

Keywords

Sound Velocity Donor State Acoustic Property Triplet Excited State Average Separation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    J. H. Reuszer and P. Fisher: Phys. Rev. 135, A1125 (1964)CrossRefADSGoogle Scholar
  2. 2.
    T. Takemori and H. Kamimura: J. Phys. C: Solid State Phys. 16, 5167 (1983)CrossRefADSGoogle Scholar
  3. 3.
    M. Kohno, K. Asano, and K. Suzuki: unpublishedGoogle Scholar
  4. 4.
    H. Sakurai and K. Suzuki: unpublishedGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1986

Authors and Affiliations

  • T. Sota
    • 1
  • K. Suzuki
    • 1
  1. 1.Department of Electrical EngineeringWaseda UniversityShinjuku, TokyoJapan

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