Abstract
Cr2+(d4) and Cr3+(d3) both scatter phonons very strongly in GaAs [1]. In Cr2+ (present in n-type and semi-insulating — SI — material) the resonant scattering occurs at υ 0 ≲ 5GHz and is attributable to tunnelling between tetragonally placed Jann-Teller wells. The scattering by Cr3+ (present in p-type and SI material) occurs at higher frequencies and is less well understood. The Cr3+ ion is also particularly interesting since the Jahn-Teller effect appears to contain strong non-linear contributions which result in the positioning of the Jahn-Teller wells along the six <110> (orthorhombic) directions. A striking demonstration of this orthorhombic symmetry is that the positions of the energy levels and also the details of the phonon scattering are sensitive to both <100> and <111> stress [2]. This contrasts with tetragonal systems where the <111> stress effects are strongly reduced (quenched), for example [3].
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© 1986 Springer-Verlag Berlin Heidelberg
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Butler, N., Jouglar, J., Salce, B., Challis, L.J., Ramdane, A., Vuillermoz, P.L. (1986). Phonon Scattering by Cr Ions in GaP and InP. In: Anderson, A.C., Wolfe, J.P. (eds) Phonon Scattering in Condensed Matter V. Springer Series in Solid-State Sciences, vol 68. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82912-3_36
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