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Depth Profiling of Dopants in Aluminum Gallium Arsenide

  • W. H. Robinson
  • J. D. Brown
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 44)

Abstract

SIMS analyses of (AI,Ga)As layered structures are complicated by variations in secondary ion yields as the ratio of Al to Ga or Al to As changes. In addition, molecular species from impurities or major elements in the material, as well as from the primary ion beam and the residual gases in the instrument,can limit sensitivity or require the use of high mass resolution for removal of the interferences. The availability of Cs+and O2 primary ion beams offers an additional parameter for optimization of sensitivity for specific dopants or impurities. This study was undertaken to evaluate and optimize the depth profiling of dopants in (Al,Ga)As.

Keywords

Depth Profile High Mass Resolution Aluminum Gallium Arsenide Primary Beam Current Good Depth Resolution 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. [1]
    J.D. Brown, W. Vandervorst, Surf. Ind. Interface Anal. 7, 74 (1985).CrossRefGoogle Scholar
  2. [2]
    W.H. Robinson, J.D. Brown, D.D. Johnston and W.M. Lau, Microbeam Analysis-1984, AD Romig Jr., JI Goldstein, Eds., San Francisco Press,331(1984).Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1986

Authors and Affiliations

  • W. H. Robinson
    • 1
  • J. D. Brown
    • 2
  1. 1.Surface Science WesternThe University of Western OntarioLondonCanada
  2. 2.Faculty of Engineering ScienceThe University of Western OntarioLondonCanada

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