Depth Profiling of Dopants in Aluminum Gallium Arsenide
SIMS analyses of (AI,Ga)As layered structures are complicated by variations in secondary ion yields as the ratio of Al to Ga or Al to As changes. In addition, molecular species from impurities or major elements in the material, as well as from the primary ion beam and the residual gases in the instrument,can limit sensitivity or require the use of high mass resolution for removal of the interferences. The availability of Cs+and O2 primary ion beams offers an additional parameter for optimization of sensitivity for specific dopants or impurities. This study was undertaken to evaluate and optimize the depth profiling of dopants in (Al,Ga)As.
KeywordsGaAs Gallium Arsenide
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