Incorporation of Chromium in Sputtered Copper Films and Its Removal During Wet Chemical Etching

  • R. J. Day
  • M. S. Waters
  • J. Rasile
Conference paper
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 44)

Abstract

In modern computing equipment, semiconductor devices are normally mounted on a substrate that acts as an interface between the circuit card or board and the silicon chip. The circuitry deposited on such substrates combined with pins through holes in the substrate material allow communication between I/O sites on a device and the card or board. In some cases the circuitry is generated by screening on a paste that, when fired, will produce lines of a conductive glass. In other cases, the metallurgy is vacuum-deposited using either evaporation or sputtering and is made of metallic components. One such metallic system consists of chromium and copper, deposited to give a Cr/Cu/Cr/ceramic film structure [1]. These layers are deposited on the substrate and circuitry formed by photolithography followed by wet chemical etching.

Keywords

Porosity Chromium Permanganate 

References

  1. 1.
    D. P. Seraphim and I. Feinberg, IBM J. Res. Dev. 25, 617, 1981.CrossRefGoogle Scholar
  2. 2.
    J. E. E. Baglin, V. Brusik, E. Alessandrini and J. F. Ziegler, “Thin Film Interdiffusion of Chromium and Copper,” in Applications of Ion Beams to Metals, S. T. Picraux, E. P. EerNisse and F. L. Vook, Eds. (Plenum Press, New York, 1974).Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1986

Authors and Affiliations

  • R. J. Day
    • 1
  • M. S. Waters
    • 1
  • J. Rasile
    • 1
  1. 1.Systems Technology DivisionIBM Corp.EndicottUSA

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