Abstract
Threshold current, output power and far field distributions were investigated on MO-VPE grown gain guided laser-diodes, having a planar proton bombarded structure, in their respective relation to the thickness of the active layer in the wavelength regime 810–870 nm.
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© 1986 Springer-Verlag Berlin, Heidelberg
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Kuijpers, F.P.J., Acket, G.A., Kock, H.G. (1986). GaAIAs Power Laser-diodes by MO-VPE Technology. In: Waidelich, W. (eds) Laser/Optoelektronik in der Technik / Laser/Optoelectronics in Engineering. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82638-2_27
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DOI: https://doi.org/10.1007/978-3-642-82638-2_27
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-16017-5
Online ISBN: 978-3-642-82638-2
eBook Packages: Springer Book Archive