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Electrons and Phonons in One and Two Dimensions in Semiconductor Structures

  • Conference paper
Dynamical Phenomena at Surfaces, Interfaces and Superlattices

Part of the book series: Springer Series in Surface Sciences ((SSSUR,volume 3))

  • 212 Accesses

Abstract

In this article an outline is given of dimensionality effects, localisation and quantisation of Hall resistance in semiconductor structures. The Si inversion layer is used as the model system in view of the relative simplicity of interpretation of phenomena.

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Author information

Authors and Affiliations

  1. Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge, CB3 0HE, UK

    M. Pepper

  2. G.E.C. Hirst Research Centre, Wembley, Middlesex, UK

    M. Pepper

Authors
  1. M. Pepper
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Editor information

Editors and Affiliations

  1. Dipartimento di Fisica, Università di Modena, Via Campi 213/A, I-41100, Modena, Italy

    Fabrizio Nizzoli

  2. IBM Forschungslaboratorium, Saeumerstraße 4, CH-8803, Rueschlikon, Switzerland

    Karl-Heinz Rieder

  3. Department of Physics, Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge, CB3 0HE, Great Britain

    Roy F. Willis

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© 1985 Springer-Verlag Berlin Heidelberg

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Pepper, M. (1985). Electrons and Phonons in One and Two Dimensions in Semiconductor Structures. In: Nizzoli, F., Rieder, KH., Willis, R.F. (eds) Dynamical Phenomena at Surfaces, Interfaces and Superlattices. Springer Series in Surface Sciences, vol 3. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82535-4_20

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  • DOI: https://doi.org/10.1007/978-3-642-82535-4_20

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-82537-8

  • Online ISBN: 978-3-642-82535-4

  • eBook Packages: Springer Book Archive

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