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Polycrystalline Silicon in Integrated Circuits

  • H. C. de Graaff
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 57)

Abstract

The use of polycrystalline silicon for integrated circuits makes it possible to produce multilayer or three-dimensional structures. Another advantage is the large range of resistivities (more than 7 orders of magnitude). Polysilicon also has drawbacks: the grain boundaries cause dopant segregation and the grain boundary states may act as trapping centres, recombination centres and scattering centres [1].

Keywords

Polycrystalline Silicon Bipolar Transistor Polysilicon Layer Polysilicon Film Polysilicon Gate 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1985

Authors and Affiliations

  • H. C. de Graaff
    • 1
  1. 1.Philips Research LaboratoriesEindhovenThe Netherlands

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