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Maskless Dry Etching of GaAs by Focused Laser Beam

  • M. Takai
  • H. Nakai
  • J. Tsuchimoto
  • J. Tokuda
  • T. Minamisono
  • K. Gamo
  • S. Namba
Conference paper
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 39)

Abstract

There has been increasing interest in the application of laser beams to semiconductor processing such as etching and deposition because of the potential for low temperature and maskless processes [1]. Laser beams, furthermore, have a feature as a clean energy source in comparison with ion beams or plasmas, which inevitably induce lattice defects or impurity incorporation when applied to etching or deposition for semiconductor materials. Local etching of GaAs by ultraviolet laser photolysis [2], for example, is a low temperature process which does not induce lattice defects and, hence, does not need subsequent annealing processes. Dry etching by laser pyrolysis, on the other hand, induces a local temperature rise, but it realizes, by an order of 3 to 4, higher etching rates than ion-beam [3] or plasma etching.

Keywords

GaAs Surface Etched Depth GaAs Sample Incident Laser Power High Etching Rate 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1984

Authors and Affiliations

  • M. Takai
    • 1
  • H. Nakai
    • 1
  • J. Tsuchimoto
    • 1
  • J. Tokuda
    • 1
  • T. Minamisono
    • 2
  • K. Gamo
    • 1
  • S. Namba
    • 1
  1. 1.Faculty of Engineering ScienceOsaka UniversityToyonaka, Osaka 560Japan
  2. 2.Faculty of ScienceOsaka UniversityToyonaka, Osaka 560Japan

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