Abstract
The limitations of silicon-on-sapphire have led to considerable interest in alternative materials for silicon on insulator device technology. We have studied the use of a cw argon ion laser to recrystallise fine grain polysilicon deposited onto oxidised silicon wafers, utilising lateral seeding techniques to extend the area of recrystallised material. This paper describes in detail the results of this work. The design of a new line beam processor is also described.
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© 1984 Springer-Verlag Berlin Heidelberg
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Adams, A.E., Morgan, S.L. (1984). Laser Recrystallisation of Silicon-on-Oxide. In: Bäuerle, D. (eds) Laser Processing and Diagnostics. Springer Series in Chemical Physics, vol 39. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82381-7_13
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DOI: https://doi.org/10.1007/978-3-642-82381-7_13
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-82383-1
Online ISBN: 978-3-642-82381-7
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