Abstract
The potential of laser irradiation for the modification of semiconductor properties has been intensively explored and used in the last years. In silicon the basic mechanisms underlying the various applications from annealing of the lattice damage to crystal growth are now understood in principle [1,2]. In compound semiconductors, however, the understanding is meagre and the results are still somewhat contradictory. The laser treatment may change the surface composition because of the difference in vapour pressure of the components. This makes the results and their interpretation more complicated. On the other hand, laser annealing is an attractive alternative to overcome the problems inherent in conventional furnace processing of compound semiconductors like compound decomposition, compensation, limited solubility of dopants, etc.
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As, D.J., Palmetshofer, L., Schuller, J., Lischka, K. (1984). CW-Laser Annealing of CdTe Epitaxial Layers. In: Bäuerle, D. (eds) Laser Processing and Diagnostics. Springer Series in Chemical Physics, vol 39. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82381-7_10
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DOI: https://doi.org/10.1007/978-3-642-82381-7_10
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