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High Density Carrier Generation in Indium Antimonide

  • M. Sheikbahae
  • P. Mukherjee
  • M. Hasselbeck
  • H. S. Kwok
Conference paper
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 38)

Abstract

The generation of high density free carriers in intrinsic and doped indium antimonide was studied with picosecond CO2 laser pulses. It was found that a very dense electron-hole plasma could be generated despite a large Burstein bandgap shift. The interaction of this dense plasma with the laser pulse was highly dynamic and nonlinear. In this paper, we shall present a consistent explanation of the observed nonlinear reflection and transmission thresholds prior to the onset of melting and damage. The computation involved the interaction of dynamic Burstein shift, Keldysh tunneling, thermal runaway heating and two-photon absorption.

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References

  1. 1.
    M. Hasselbeck and H.S. Kwok, Appl. Phys. Lett. 41, 1138 (1982).ADSCrossRefGoogle Scholar
  2. 2.
    L.V. Keldysh, Soy. Phys. JETP 20, 1307 (1964).Google Scholar
  3. 3.
    M. Hasselbeck, M. Sheikbahae, P. Mukherjee and H.S. Kwok, to be published.Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1984

Authors and Affiliations

  • M. Sheikbahae
    • 1
  • P. Mukherjee
    • 1
  • M. Hasselbeck
    • 1
  • H. S. Kwok
    • 1
  1. 1.Department of Electrical and Computer EngineeringState University of New York at BuffaloAmherstUSA

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