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Picosecond Photoemission Studies of Laser-Induced Phase Transitions in Silicon

  • A. M. Malvezzi
  • H. Kurz
  • N. Bloembergen
Conference paper
  • 129 Downloads
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 38)

Abstract

Quantitative evaluation of the energy transfer processes from optically excited electron-hole pairs to lattice phonons has become an important issue in the study of laser-induced phenomena at the surface of semiconductors. This goal has been mostly pursued through time-resolved optical diagnostics. Electron-hole plasma kinetics and evolution of the lattice temperature have been explored in a wide range of time scales [1]. However, lack of information on the energy dependence of several critical parameters in the dielectric response of the medium prevent an evaluation of the energy content of the carriers with these methods. The second question of major importance for the understanding of the laser-induced phase transitions is whether the solid state lattice structure becomes unstable by electronic or vibronic excitation. Even with ps laser excitation, however, strong evidence for an ultrafast energy transfer from the plasma to the lattice phonons has been found [2] and the validity of the thermal model confirmed.

Keywords

Laser Fluence Energy Transfer Process Space Charge Effect Carrier Temperature Lattice Phonon 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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    Work supported by the U.S. Office of Naval Research under contract N00014–83K-0030 and by the Joint Services Electronics Program of the U.S. Department of Defense under contract N00014–75-C-0648.Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1984

Authors and Affiliations

  • A. M. Malvezzi
    • 1
  • H. Kurz
    • 1
  • N. Bloembergen
    • 1
  1. 1.Division of Applied SciencesHarvard UniversityCambridgeUSA

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