Dynamic Response of Millimeter Waves in a Semiconductor Waveguide to Picosecond Illumination
To construct an electronically controllable phased array system in the millimeter-wave region, one needs switches and phase shifters which are operable at speeds of about one nanosecond with a time precision of several picoseconds . Such a speed requirement is beyond the capability of current techniques. A class of devices in which the propagation parameters of millimeter-wave signals are controlled by optically induced electron-hole plasmas in semiconductor waveguides appears to be one method of achieving such speed and precision [2–5]. A complete understanding of the physics of the interaction of millimeter-waves with an electron-hole plasma is essential for the design of such devices. An outstanding problem has been the measurement of the transient response of the millimeter-wave system after illumination by lowrepetition-rate, variable energy pulses. In this paper, we report a dynamic bridge technique which has the capability to measure simultaneously the relative phase and loss response of the millimeter-wave system to illumination by frequency doubled single pulses from a mode-locked Nd:YAG laser with a potential time resolution in the picosecond range.
KeywordsRecombination Time Time Precision Speed Requirement Silicon Waveguide Loss Response
Unable to display preview. Download preview PDF.
- 1..H. Jacobs and M. H. Chrepta, IEEE Trans. MTT-22, pp. 411–417, (1974).Google Scholar
- 4.C. H. Lee, A. M. Vaucher, M. G. Li, and C. D. Striffler, Presented at IEEE MTT-S International Microwave Symposium, paper C1, p. 103 (1983).Google Scholar
- 6.E. A. J. hlarcatili, Bell Syst. Tech. J., vol. 48, pp. 2071–2102, (1969).Google Scholar
- 7.J. E. Goell, Bell Syst. Tech. J., vol 48, 2133–2160, (1969).Google Scholar