Abstract
The strain in IV-VI semiconductor superlattices (SL) introduces qualitatively new features, originating from the many-valley band structure, not found in III-V SL systems. For the PbTe/PbSnTe system the misfit and substrate induced strain in the constituent layers is determined by X-ray diffractometry. The SL band structure, recently calculated by the envelope function approach is strongly modified by this strain. By varying the thickness ratio of the constituents and thus the strain, the electronic properties can be influenced accordingly.
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© 1984 Springer-Verlag Berlin Heidelberg
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Fantner, E.J., Bauer, G. (1984). Strained Layer IV-VI Semiconductor Superlattices. In: Bauer, G., Kuchar, F., Heinrich, H. (eds) Two-Dimensional Systems, Heterostructures, and Superlattices. Springer Series in Solid-State Sciences, vol 53. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82311-4_22
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DOI: https://doi.org/10.1007/978-3-642-82311-4_22
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