Field-Effect Transistors with a Two-Dimensional Electron Gas as Channel

  • Heinrich Dämbkes
  • Klaus Heime
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 53)


The two-dimensional electron gas at an abrupt interface between highly n-doped Al(x)Ga(1-x)As and high purity undoped GaAs exhibits very high electron mobilities. Therefore it is a suitable candidate for high speed field-effect transistors (FET). It will be shown which factors determine the FET performance. Despite parasitic effects such as series resistances the (AlGa)As/GaAs heterostructure FET exhibits a pronounced improvement with respect to best GaAs homostructure MESFETs.


Gate Length Electron Drift Velocity Gate Region Velocity Overshoot Sheet Carrier Concentration 
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Copyright information

© Springer-Verlag Berlin Heidelberg 1984

Authors and Affiliations

  • Heinrich Dämbkes
    • 1
  • Klaus Heime
    • 1
  1. 1.Fachgebiet Halbleitertechnik/HalbleitertechnologieUniversität-Gesamthochschule-DuisburgDuisburgFed. Rep. of Germany

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