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Improvements in the Routine Depth Profiling of Doping Elements

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Secondary Ion Mass Spectrometry SIMS IV

Part of the book series: Springer Series in Chemical Physics ((CHEMICAL,volume 36))

Abstract

In the SIMS depth profiling of doping elements, crater-edge and surrounding influences may still limit the dynamic range [1] , despite the impressing progress that has been achieved in the past [2,3] . In addition, profile deviations may sometimes be caused by residual contamination spots in the crater area.

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References

  1. W.Vandervorst, H.E.Maes, and R.De Keersmaecker, Surf. Interface Anal. 4, 245 (1982)

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  2. C.W.Magee and R.E.Honig, Surf, Interface Anal. 4, 35 (1982)

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  3. K.Wittmaack and J.B.Clegg, Appl. Phys. Lett. 37, 285 (1980)

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  4. K. Wittmaack, Appl. Phys. 12, 149 (1977)

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© 1984 Springer-Verlag Berlin Heidelberg

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v. Criegern, R., Weitzel, I., Fottner, J. (1984). Improvements in the Routine Depth Profiling of Doping Elements. In: Benninghoven, A., Okano, J., Shimizu, R., Werner, H.W. (eds) Secondary Ion Mass Spectrometry SIMS IV. Springer Series in Chemical Physics, vol 36. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82256-8_82

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  • DOI: https://doi.org/10.1007/978-3-642-82256-8_82

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-82258-2

  • Online ISBN: 978-3-642-82256-8

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