Abstract
In the SIMS depth profiling of doping elements, crater-edge and surrounding influences may still limit the dynamic range [1] , despite the impressing progress that has been achieved in the past [2,3] . In addition, profile deviations may sometimes be caused by residual contamination spots in the crater area.
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© 1984 Springer-Verlag Berlin Heidelberg
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v. Criegern, R., Weitzel, I., Fottner, J. (1984). Improvements in the Routine Depth Profiling of Doping Elements. In: Benninghoven, A., Okano, J., Shimizu, R., Werner, H.W. (eds) Secondary Ion Mass Spectrometry SIMS IV. Springer Series in Chemical Physics, vol 36. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82256-8_82
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DOI: https://doi.org/10.1007/978-3-642-82256-8_82
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