Application of Computer-Controlled SIMS to Depth Profiling of Impurities Implanted in Silicon with High Dose of B+or BF2+ Ions

  • T. Tanigaki
  • S. Kawado
  • K. Nishiyama
Conference paper
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 36)


Recently, TANIGAKI and co-workers have developed an electronic data processing system for an ion microprobe mass analyzer (ARL-IMMA) interfaced with a personal computer, that is to say an “automatic depth profiler” [1]. In this system, conversion of secondary ion intensity to atomic concentration and of sputtering time to depth scale can be easily carried out by setting two main parameters, viz. the measured conversion coefficient and the sputtering rate.


Furnace Boron Fluorine 


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    T. Tanigaki and T. Harada : Japan Society for the Promotion of Science, 141st Committee-Microbeam Analysis, The 10th Local Meeting, July (1982) 45.Google Scholar
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    K. Nishiyama, M. Arai and N. Watanabe : Jpn. J. Appl. Phys. 19, L563 (1980).CrossRefGoogle Scholar
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    H. Ryssel, K. Müller, K. Haberger, R. Henkelmann and F. Jahnel : Appl. Phys. 22, 35 (1980).CrossRefGoogle Scholar
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Copyright information

© Springer-Verlag Berlin Heidelberg 1984

Authors and Affiliations

  • T. Tanigaki
    • 1
  • S. Kawado
    • 1
  • K. Nishiyama
    • 2
  1. 1.Sony CorporationYokohama 240Japan
  2. 2.Research Center and Semiconductor DivisionAtsugi 243Japan

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