Abstract
Plasma silicon nitride film has been widely applied to a passivation layer of photo-electric devices. Since its physical and electrical properties are strongly dependent on a variety of deposition parameters, it is important to evaluate the film composition to control the deposition process. From this point of view, we utilized SIMS for the quantitative estimation of nitrogen in silicon nitride using Ar+ primary ion beam. Results are compared with those obtained by XPS.
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References
A. Benninghoven, W. Sichtermann and S. Storp: Thin Sol. Films, 28, 59 (1975)
G. Blaise: Material Characterization Using Ion Beams (Plenum Press)
S. Thomas and R. J. Mattox: J. Electrochem. Soc., 124, 12 (1977)
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© 1984 Springer-Verlag Berlin Heidelberg
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Shima, T., Koyama, M. (1984). Quantitative Analysis of Amorphous Silicon Nitride Using SIMS. In: Benninghoven, A., Okano, J., Shimizu, R., Werner, H.W. (eds) Secondary Ion Mass Spectrometry SIMS IV. Springer Series in Chemical Physics, vol 36. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82256-8_73
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DOI: https://doi.org/10.1007/978-3-642-82256-8_73
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-82258-2
Online ISBN: 978-3-642-82256-8
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