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Low Energy Oxygen Ion Implantation and Ion-Bombardment Induced Oxidation of Silicon, Studied by SIMS, AES, and XPS

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Secondary Ion Mass Spectrometry SIMS IV

Part of the book series: Springer Series in Chemical Physics ((CHEMICAL,volume 36))

Abstract

The influence of oxygen ion bombardment and oxygen exposure on secondary ion emission of silicon surfaces seems to be the subject most extensively studied in SIMS literature, but only little is known about the kinetics of oxygen uptake and oxygen depth profiles for low energy oblique incidence primary bombardment. In the present paper we give a preliminary account of our combined method investigations of secondary ion emission of silicon under oxygen load.

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Author information

Authors and Affiliations

  1. Universität Münster, Physikalisches Institut, Domagkstraße 75, Münster, D-4400, Fed. Rep. of Germany

    P. Sander, U. Kaiser, O. Ganschow, R. Jede, L. Wiedmann & A. Benninghoven

Authors
  1. P. Sander
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  2. U. Kaiser
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  3. O. Ganschow
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  4. R. Jede
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  5. L. Wiedmann
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  6. A. Benninghoven
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Editor information

Editors and Affiliations

  1. Phsysikalisches Inst., Universität Münster, Münster, D-4400, Fed. Rep. of Germany

    A. Benninghoven

  2. College of General Education, Osaka University, Osaka 560, Japan

    J. Okano

  3. Department of Applied Physics, Osaka University, Osaka 565, Japan

    R. Shimizu

  4. Philips Research Laboratories, Eindhoven, The Netherlands

    H. W. Werner

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© 1984 Springer-Verlag Berlin Heidelberg

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Sander, P., Kaiser, U., Ganschow, O., Jede, R., Wiedmann, L., Benninghoven, A. (1984). Low Energy Oxygen Ion Implantation and Ion-Bombardment Induced Oxidation of Silicon, Studied by SIMS, AES, and XPS. In: Benninghoven, A., Okano, J., Shimizu, R., Werner, H.W. (eds) Secondary Ion Mass Spectrometry SIMS IV. Springer Series in Chemical Physics, vol 36. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82256-8_66

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  • DOI: https://doi.org/10.1007/978-3-642-82256-8_66

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-82258-2

  • Online ISBN: 978-3-642-82256-8

  • eBook Packages: Springer Book Archive

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