Quantitative Investigation of As Segregation at the SiO2/Si Interface by SIMS and RBS
Dynamic segregation of dopants at the SiO2/Si-interface during thermal oxidation is of major interest for process development and modelling in silicon integration circuit technology. The dopant concentrations of interest extend over a wide concentration range, hardly accessible with methods other than SIMS.
KeywordsSample Type Oxide Thickness Ionization Yield Wide Concentration Range Concentration Calibration
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