Quantitative Investigation of As Segregation at the SiO2/Si Interface by SIMS and RBS

  • H. Frenzel
  • J. L. Maul
  • P. Eichinger
  • E. Frenzel
  • K. Haberger
  • H. Ryssel
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 36)

Abstract

Dynamic segregation of dopants at the SiO2/Si-interface during thermal oxidation is of major interest for process development and modelling in silicon integration circuit technology. The dopant concentrations of interest extend over a wide concentration range, hardly accessible with methods other than SIMS.

Keywords

Auger Channeling 

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References

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    W. Reuter and K. Wittmaack: Appl. Surf. Sci. 5, 221 (1980)CrossRefGoogle Scholar
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    J. Maul, H. Frenzel: Proceedings, Springer Series in Electrophysics 10, 361 (1982)Google Scholar
  3. 3.
    H. Frenzel: Ph. D. Thesis, Technical University Aachen, FRG (1980)Google Scholar
  4. 4.
    K. Wittmaack: Appl. Phys. Lett. 29, 552 (1970)CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1984

Authors and Affiliations

  • H. Frenzel
    • 1
  • J. L. Maul
    • 1
  • P. Eichinger
    • 2
  • E. Frenzel
    • 2
  • K. Haberger
    • 2
  • H. Ryssel
    • 2
  1. 1.Atomika Technische Physik GmbHMünchenFed. Rep. of Germany
  2. 2.Institut für FestkörpertechnologieMünchenFed. Rep. of Germany

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