Abstract
The utility of ion implantation to investigate the influence of reactive ions on the secondary ion emission has been demonstrated by COLLIGON and KIRIAKIDES [1] in the case of copper matrix material.
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References
J.S.Colligon and K.Kiriakides: Vacuum 29,357(1979)
W.Frentrup, M.Griepentrog, and U.Mueller-Jahreis: Phys. Stat. Sol. (a) 79(1983) ( in print )
V.R.Deline, W.Katz, C.A.Evans, and P.Williams: Appl. Phys. Letters 33,832(1978)
J.E.Chelgren, W.Katz, V.R.Deline, C.A.Evans, R.J.Blattner, and P.Williams: J. Vac. Sci. Technol. 16,324(1979)
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© 1984 Springer-Verlag Berlin Heidelberg
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Frentrup, W., Griepentrog, M., Klose, H., Kreysch, G., Mueller-Jahreis, U. (1984). Influence of Alkali Metals on the Negative Secondary Ion Emission from Silicon. In: Benninghoven, A., Okano, J., Shimizu, R., Werner, H.W. (eds) Secondary Ion Mass Spectrometry SIMS IV. Springer Series in Chemical Physics, vol 36. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82256-8_12
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DOI: https://doi.org/10.1007/978-3-642-82256-8_12
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