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Chemistry and Physics of Solid Surfaces V pp 297–316Cite as

Ising Model Simulations of Crystal Growth

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Part of the book series: Springer Series in Chemical Physics ((CHEMICAL,volume 35))

Abstract

Kinetic Ising model simulations have elucidated many aspects of crystal growth. For example, studies of the motion of close-packed surfaces of perfect crystals provided evidence for a surface roughening transition, where the two-dimensional nucleation barrier disappears [13.1–3]. Competing mechanisms such as spiral growth and 2d nucleation have been simulated and the relative importance of the processes has been assessed [13.3,4].

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References

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Authors
  1. G. H. Gilmer
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Editors and Affiliations

  1. Department of Chemistry and Laboratory for Surface Studies, The University of Wisconsin-Milwaukee, 53201, Milwaukee, WI, USA

    Ralf Vanselow

  2. Department of Chemistry, University of Auckland, Private Bag, Auckland, New Zealand

    Russell Howe

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© 1984 Springer-Verlag Berlin Heidelberg

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Gilmer, G.H. (1984). Ising Model Simulations of Crystal Growth. In: Vanselow, R., Howe, R. (eds) Chemistry and Physics of Solid Surfaces V. Springer Series in Chemical Physics, vol 35. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82253-7_13

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  • DOI: https://doi.org/10.1007/978-3-642-82253-7_13

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-82255-1

  • Online ISBN: 978-3-642-82253-7

  • eBook Packages: Springer Book Archive

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