Laser Doping of Silicon by the Dissociation of Metal Alkyls

Abstract

Pulsed UV laser doping of silicon has been shown to yield high levels of activated dopant for a variety of implant depths and dopant concentrations. The technique combines the rapid thermal cycling times found in pulsed laser annealing, with the localised in situ generation of dopant species by pyrolysis and photolysis of precursors to allow one-step fabrication of p-n devices [1,2]. We have now demonstrated single-step doping of silicon with boron and phosphorus to form p- and n-type material; and performed initial experiments on overdoping to produce npn or pnp trilayer structures.