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Fundamental Physics of Amorphous Semiconductors pp 33–39Cite as

Surface Effects and Transport Properties in Thin films of Hydrogenated Silicon

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Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 25))

Abstract

The measurement of transport properties of hydrogenated amorphous silicon, in particular the variation of conductivity with temperature, provides an important test for existing theories [1].

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References

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Author information

Authors and Affiliations

  1. Laboratoire P.M.C., Ecole Polytechnique, F-91128, Palaiseau, France

    I. Solomon

Authors
  1. I. Solomon
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Editor information

Editors and Affiliations

  1. Research Institute for Fundamental Physics, Yukawa Hall, Kyoto University, Kyoto 606, Japan

    Fumiko Yonezawa

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© 1981 Springer-Verlag Berlin Heidelberg

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Solomon, I. (1981). Surface Effects and Transport Properties in Thin films of Hydrogenated Silicon. In: Yonezawa, F. (eds) Fundamental Physics of Amorphous Semiconductors. Springer Series in Solid-State Sciences, vol 25. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-81604-8_3

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  • DOI: https://doi.org/10.1007/978-3-642-81604-8_3

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-81606-2

  • Online ISBN: 978-3-642-81604-8

  • eBook Packages: Springer Book Archive

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