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Localized States in the Gap of Amorphous Selenium

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The Physics of Selenium and Tellurium

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 13))

Abstract

It is now well-established that a finite density of states exists in the amorphous material band gap [1]. In order to determine the localized states in the bottom of the gap of amorphous Se, we have studied the dark and the photoconductivity of Se layers obtained by vacuum evaporation on a substrate remained at T = 290K.

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References

  1. See for example N.F. Mott: Electronic and Structural Properties of Amorphous Semiconductor, ed. by P.C. Le Comber and J. Mort (Acad.Press, London 1973) p. 1.

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  3. A. Rose: Concepts in Photoconductivity and Allied Pro-blems (interscience, New York 1963).

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  4. For further details upon the calculation see: D. Carles, C. Vautier and C. Viger: Thin Solid Films, 17, 67 (1973).

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Author information

Authors and Affiliations

  1. Laboratoire d’Etude des Couches Minces Amorphes et Polycristallines, Faculté des Sciences et des Techniques, F-76130, Mont-Saint-Aignan, France

    C. Vautier, D. Carles & C. Viger

Authors
  1. C. Vautier
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  2. D. Carles
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  3. C. Viger
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Editor information

E. Gerlach P. Grosse

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© 1979 Springer-Verlag Berlin Heidelberg New York

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Vautier, C., Carles, D., Viger, C. (1979). Localized States in the Gap of Amorphous Selenium. In: Gerlach, E., Grosse, P. (eds) The Physics of Selenium and Tellurium. Springer Series in Solid-State Sciences, vol 13. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-81398-6_34

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  • DOI: https://doi.org/10.1007/978-3-642-81398-6_34

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-81400-6

  • Online ISBN: 978-3-642-81398-6

  • eBook Packages: Springer Book Archive

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