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Submillimeter Cyclotron Resonance in Uniaxially Stressed Tellurium

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The Physics of Selenium and Tellurium

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 13))

Abstract

The investigation of the stress dependence of the electronic properties of semiconductors is a successful tool to determine the deformation potentials and the coefficients of the k·p model. Because of the specific structure of the compliance tensor for Te, the application of uniaxial and hydrostatic stress is complementary. Therefore only the combined results of both experimental configurations yield comprehensive knowledge of the parameters involved.

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References

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E. Gerlach P. Grosse

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© 1979 Springer-Verlag Berlin Heidelberg New York

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Steigenberger, U., von Ortenberg, M., Bangert, E. (1979). Submillimeter Cyclotron Resonance in Uniaxially Stressed Tellurium. In: Gerlach, E., Grosse, P. (eds) The Physics of Selenium and Tellurium. Springer Series in Solid-State Sciences, vol 13. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-81398-6_19

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  • DOI: https://doi.org/10.1007/978-3-642-81398-6_19

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-81400-6

  • Online ISBN: 978-3-642-81398-6

  • eBook Packages: Springer Book Archive

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