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Materialherstellung und -technologie

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Optoelektronik I

Part of the book series: Halbleiter-Elektronik ((HALBLEITER,volume 10))

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Zusammenfassung

Die Materialherstellung spielt bei Lumineszenzdioden eine besondere Rolle, da der Einbau der strahlenden und nichtstrahlenden Rekombinationszentren und damit auch der Quantenwirkungsgrad der Dioden empfindlich vom Herstellverfahren abhängen.

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Literatur zu Kapitel 4

  1. Jordan, A.S.; von Neida, A.R.; Caruso, R.; Kin, C.K.: Determination of the Solidus and Gallium and Phosphorus Vancancy Concentration in GaP. J. Electrochem. Soc. 121 (1974) 153–158

    Article  Google Scholar 

  2. Ringle, C.M.: Synthesis of Gallium Phosphide. J. Electrochem. Soc. 118 (1971) 609–613

    Article  Google Scholar 

  3. Raab, G.; Schwarzmichel, K.: Gallium Phosphide, a Material for Light-Emitting Diodes. Siemens Forsch.–u. Entwickl. Ber. 3 (1974) 185–189

    Google Scholar 

  4. Folbert, O.G.: Überblick über einige physikalisch-chemische Eigenschaften der Arir-Bv -Verbindungen unter besonderer Berücksichtigung der Zustandsdiagramme. Halbleiterprobleme 5. Braunschweig: Vieweg 1960, S. 40–74

    Google Scholar 

  5. Guire, R.J.; Weiser, K.: US Patent 2. 871 100 (1959)

    Google Scholar 

  6. Kaneko, K.; Ayabe, M.; Dosen, M.; Morizone, K.; Usui, S.; Watanabe, N.: A New Methode of Growing GaP Crystals for Light Emitting Diodes. Proc. IEEE 61 (1973) 884–890

    Article  Google Scholar 

  7. Craford, M.G.; Groves, W.O.: Vapor Phase Epitaxial Materials for LED Applications. Proc. IEEE 61 (1973) 862–880

    Article  Google Scholar 

  8. Stringfellow, G.B.; Weiner, M.E.; Burmeister, R.A.: Growth and Properties of VPE GaP for Green LEDs. J. Electron. Mat. 4 (1975) 363–387

    Article  Google Scholar 

  9. Stringfellow, G.B.; Hall, H.T.: VPE Growth of Al Gaj1-xAs. J. Cryst. Growth 43 (1978) 47–60

    Article  Google Scholar 

  10. Zschauer, K.H.: Liquid-Phase Epitaxy of GaAs and the Incorporation of Impurities. Festkörperprobleme XV. Braunschweig: Pergamon/Vieweg 1975, S. 1–20

    Google Scholar 

  11. Hayashi, I.; Panish, M.B.; Foy, P.W.; Sumski, S.: Junction Lasers which Operate Continuously at Room Temperature. Appl. Phys. Lett. 17 (1970) 109–111

    Article  Google Scholar 

  12. Dawson, L.R.: Near Equilibrium LPE Growth of GaAs-Ga1-xAl As Double Heterostructures. J. Crystal Growth 27 (1974) 86–96

    Google Scholar 

  13. Jordan, A.S.; Trumbore, F.A.; Wolfstirn, K.B.; Kowalchik, M.; Roccasecca, D.D.: The Incorporation of Tellurium in Liquid Phase Epitaxial (LPE) GaP: Implications for Oxygen Incorporation. J. Electrochem. Soc. 120 (1973) 791–799

    Article  Google Scholar 

  14. Rosztoczy, F.E.: Eutectic Epitaxy. J. Electrochem. Soc. 17 (1968) 516

    Google Scholar 

  15. Rode, D.L.: Isothermal Diffusion Theory of LPE: GaAs, GaP, Bubble Garnet. J. Cryst. Growth 20 (1973) 13–23

    Article  Google Scholar 

  16. Cho, A.Y.; Arthur, J.R.: Molecular Beam Epitaxy. Progr. in Sol. State Chem. 10 (1975) 157–191

    Google Scholar 

  17. Antypas, G.A.; Moon, R.L.; James, L.W.; Edgecumbe, J.; Bell, R.L.: III-V Quaternary Alloys. Inst. Phys. Conf. Ser. No. 17 (1972) 48–54

    Google Scholar 

  18. Ettenberg, M.; Paff, R.J.: Thermal Expansion of AlAs. J. Appl. Phys. 41 (1970) 3926–3927

    Article  Google Scholar 

  19. Chin, R.; Holanyak, N. Jr.; Kolbas, R.M.; Rossi, J.A.; Keune, D.L.; Groves, W.O.: Single Thin-Active-Layer Visible-Spectrum In1,Ga„P1-xAsz Heterostructure Laser. J. Appl. Phys. 49 (1978) 2551–2556

    Article  Google Scholar 

  20. Longini, R.L.: Rapid Zinc Diffusion in GaAs. Sol. State Electron. 5 (1962) 127–130

    Article  Google Scholar 

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Authors and Affiliations

  1. München, Deutschland

    Dr. rer. nat. Günter Winstel (Leiter des Fachgebietes Festkörperelektronik in den Forschungslaboratorien der Siemens AG) & Dr. phil. Claus Weyrich (Leiter der Fachabteilung Optoelektronische Halbleiter in den Forschungslaboratorien der Siemens AG)

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  1. Dr. rer. nat. Günter Winstel
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  2. Dr. phil. Claus Weyrich
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© 1981 Springer-Verlag Berlin, Heidelberg

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Winstel, G., Weyrich, C. (1981). Materialherstellung und -technologie. In: Optoelektronik I. Halbleiter-Elektronik, vol 10. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-81377-1_4

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  • DOI: https://doi.org/10.1007/978-3-642-81377-1_4

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-09598-9

  • Online ISBN: 978-3-642-81377-1

  • eBook Packages: Springer Book Archive

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