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Excitons pp 55-182 | Cite as

Bound Excitons in Semiconductors

  • P. J. Dean
  • D. C. Herbert
Part of the Topics in Current Physics book series (TCPHY, volume 14)

Abstract

We have attempted a comprehensive account of the nature and properties of bound excitons (BE) in semiconductors. We have not attempted to give a comprehensive survey of the properties of BE in all semiconductors where these effects have been reliably identified. Such attempts are foredoomed to failure other than in a text of encyclopaedic dimension. Rather, we consider the main characteristics of BE and the essential information they provide both on the nature of the host semiconductor and of the impurity or defect at which the exciton is localised. The essential properties are illustrated by reference to systems selected sometimes for reasons associated with the historical development of the subject since its genesis in the mid 1950s, sometimes because of the particular clarity of properties in the chosen system and sometimes, we hope not excessively frequently, because of the prejudices of the present authors.

Keywords

Exciton State Free Exciton Conduction Band Minimum Phonon Coupling Longitudinal Optical 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Chapter 3

  1. P.J. Dean: Copper, the dominant acceptor in refined, undoped zinc telluride. J. Luminesc. (to be published)Google Scholar
  2. N. Bensahel, N. Magnea, M. Dupuy: Behaviour of copper in ZnTe: SEM-CL and PL. Solid State Commun. (to be published)Google Scholar
  3. Reference p.90. The excited states of donor BE in GaP have recently been interpreted by hole excitations at the negative donor ion D, binding energy 15±2 meV, as well as by BE with different Bloch symmetry.Google Scholar
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  5. Although the shell model of Fig.3.35 provides a good description of the pattern of multiple bound exciton states for donors and acceptors in Si (Sect.3.2.5), recent work has emphasised a possible need to reconsider the dominant interactions which lead to the observed splittings. Thus, the splittinq between the α and β series in Si, interpreted as a valley-orbit splitting of the MBE states, is nearly independent of the exciton number n and only weakly dependent on the valley-orbit splitting of the donor even for n = 1. Probably, electron-electron interactions dominate these splittings of the MBE complex.Google Scholar
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  7. Recent high resolution measurements on P-doped Ge have shown that many of the luminescence lines reported by MARTIN [3.157] as MBE in fact involve γ1-type transitions of the single BE (Fig.3.35). Optical absorption spectra contain δ-type transitions to some of the same set of BE excited states, observed at the LA MC phonon-assisted absorption edge. The Γl,Γ5;Γ8 single BE state exhibits five subcomponents, interpreted in terms of splittings due to interparticle interactions, which are much larger in Ge than in Si. These effects are regarded as corrections to the basic SM, whose existence does not negate its usefulness. A small group of MBE lines are seen near 0.7385 eV.Google Scholar
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Copyright information

© Springer-Verlag Berlin Heidelberg 1979

Authors and Affiliations

  • P. J. Dean
  • D. C. Herbert

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