Conductive Properties of the Ion Implanted Binary System Si1−XAlX

  • H. Kräutle
  • S. Kalbitzer
Conference paper

Abstract

Ion doses of up to about 5 · 1017 Al/cm2, at 20 keV energy, were implanted into silicon at room temperature. The electrical properties of the implanted layers were measured as a function of ion dose and annealing temperature. Metallic conduction was observed at doses in the order of 1017 Al/cm2. Sheet resistivities of about 10Ω/□ were obtained. After annealing above 600°C all samples were p-type semiconductors. The experimental results are discussed in terms of physical processes such as hopping, percolation and precipitation.

Keywords

Quartz Helium Recrystallization 

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Copyright information

© Springer-Verlag, Berlin · Heidelberg 1971

Authors and Affiliations

  • H. Kräutle
    • 1
  • S. Kalbitzer
    • 1
  1. 1.Max Planck Institut für KernphysikHeidelbergGermany

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