Conductive Properties of the Ion Implanted Binary System Si1−XAlX
Ion doses of up to about 5 · 1017 Al/cm2, at 20 keV energy, were implanted into silicon at room temperature. The electrical properties of the implanted layers were measured as a function of ion dose and annealing temperature. Metallic conduction was observed at doses in the order of 1017 Al/cm2. Sheet resistivities of about 10Ω/□ were obtained. After annealing above 600°C all samples were p-type semiconductors. The experimental results are discussed in terms of physical processes such as hopping, percolation and precipitation.
KeywordsQuartz Helium Recrystallization
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