Abstract
Ions of B, Ga, P, and As were implanted into germanium at room temperature. The energies ranged between 4 and 30 keV. Doses of 1013, 1014, 1015 ions/cm2 were applied. After successive annealing steps at temperatures up to 600 °C the layers were measured by Hall effect and sheet resistivity techniques. All implants, except Ge(B), show annealing thresholds between 200 and 400°C. Ge(B) is already electrically active in the as-implanted state. The maximum electrical yield is roughly proportional to the ion dose in all cases.
Doping profiles of B, P, and Ga implants in (111) and (110) direction were determined by electrical and layer removal techniques. Deep penetrating fractions due to channeling and diffusion are observed. The electrical yields amount to ~ 20% for Ge(B) and Ge(P), and~80% for Ge(Ga) implants.
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Herzer, H., Kalbitzer, S. (1971). Electrical Properties of Ion Implanted Germanium. In: Ruge, I., Graul, J. (eds) Ion Implantation in Semiconductors. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-80660-5_42
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DOI: https://doi.org/10.1007/978-3-642-80660-5_42
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