Abstract
The effects of arsenic ion implantation on electrical properties of 20 keV cadmium and tellerium implanted layer in the silicon doped n-type GaAs have been investigated for the dose of 1014 – 1016/cm2. Measurements of the carrier concentration profile show that a very low conductivity region exists beyond the heavily doped p-type surface layer in the cadmium implated specimen.
Experimental results indicate that the formation of a low conductivity layer with a thickness of few microns is due to the compensation of donor impurities in the substrate by arsenic vacancies. Some of arsenic vacancies may associated with donor impurities i.e. silicon, and then a layer of low carrier concentration formed over the region where a sufficient large number of arsenic vacancies diffuse into substrate, provide that this arsenic vacancy-donor complex acts as an acceptor.
In order to examine arsenic vacancy diffusion during the hot implantation, arsenic implantation were performed at room temperature and 500 °C, after cadmium implantation at 500°C for dose of 1016/cm2. Also, these specimens showed a p-i-n structure of the carrier distribution. On the other hand, arsenic ion implantation at room temperature followed by cadmium implantation at 500 °C can distinctly prevent the diffusion of arsenic vacancies and the formation of the i-region. The pre-implantation of arsenic ions at room temperature is useful manner to prevent the formation of i-region in the case of the tellerium implantation. However, the pre-implantation of gallium ions at room temperature shows to enhance the formation of i-region.
The difference of the injection luminescent spectrums of diodes which were fabricated using with these specimens have also been investigated.
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© 1971 Springer-Verlag, Berlin · Heidelberg
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Itoh, T., Kushiro, Y. (1971). The Effects of Arsenic Ion Implantation in GaAs. In: Ruge, I., Graul, J. (eds) Ion Implantation in Semiconductors. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-80660-5_23
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DOI: https://doi.org/10.1007/978-3-642-80660-5_23
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-80662-9
Online ISBN: 978-3-642-80660-5
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