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Deposition of Ga and As Adatoms on the Ge (111) and Si (111) Surfaces: A First-Principles Study

  • C. Cheng
  • K. Kunc
Conference paper

Abstract

The (1×1) and (\(\sqrt 3 \times \sqrt 3 \))R30° (T4) structures of Ga and As adatoms on the Ge(111) and Si(111) surfaces are studied using the first-principles calculations. The surface energetics predicts, in some cases, a transformation of the T4 structure (surface covered with 1/3 monolayer (ML) of adatoms) into domains of the 1-ML covered (1×1) structure and areas of clean reconstructed surface. For As adatoms, such phase separation is favored on both substrates, while for Ga adatoms, it is only preferred on the Ge(111) surfaces. These results are compared with experimental observations.

Keywords

Phase Separation Adsorption Energy Uniform Coverage Segregation Energy Translational Unit 
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Copyright information

© Springer-Verlag Berlin Heidelberg 1998

Authors and Affiliations

  • C. Cheng
    • 1
  • K. Kunc
    • 2
  1. 1.Department of PhysicsNational Cheng Kung UniversityTainanTaiwan, China
  2. 2.Laboratoire de Physique des Solides associé au CNRSParis-Cedex 05France

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