Skip to main content
SpringerLink
Log in

Atomically Abrupt Interfaces of Compound Semiconductor Heterostructures: The AlAs/GaAs Case

  • Chapter
Surface Science

  • 489 Accesses

Abstract

The structure of AlAs/GaAs/AlAs quantum well interfaces grown with 100 s interruption at each of the interfaces is investigated. Cathodoluminescence (CL) peak energy histograms, wavelength images of the excitonic recombination and high-resolution transmission electron microscopy pictures yield partly identical and partly complementary atomic-scale information in the spatial frequency range from 1 mm−1 to 3 nm−1. Large smooth islands extending more than 2000 nm at the AlAs on GaAs interface are unambiguously observed by CL. TEM-pictures show interfaces without any steps within the whole area of observation being 150 nm, thus corroborating the CL results. In contrast to this the island extension at the GaAs on AlAs interface is 2–4 nm. All interfaces are found to be graded in growth direction due to cation exchange.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution
Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 39.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 54.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. C. Weisbuch, R.C. Miller, R. Dingle, A.C. Gossard and W. Wiegmann; Solid State Commun. 37, 219 (1981).

    Article  CAS  Google Scholar 

  2. see e.g. M.S. Miller, H. Weman, C.E. Pryor, M. Krishnamurty, P.M. Petroff, H. Krömer, and J.L. Merz; Phys. Rev. Lett. 68, 3464 (1992).

    Article  CAS  Google Scholar 

  3. J. Christen, E. Kapon, M. Grundmann, D.M. Hwang, M. Joschko, and D. Bimberg; Phys. stat sol (b) 173, 307 (1992)

    Article  CAS  Google Scholar 

  4. Appl. Phys. Lett. 61, 67 (1992).

    Article  CAS  Google Scholar 

  5. J. Christen and D. Bimberg, Phys. Rev. B42, 7213 (1990).

    Google Scholar 

  6. R.F. Schnabel, R. Zimmermann, D. Bimberg, H. Nickel, R. Lösch and W. Schlapp; Phys. Rev. B46, 9873 (1992).

    Google Scholar 

  7. D. Bimberg, J. Christen, R.K. Bauer, D. Oertel, D.E. Mars, and J.N. Miller; J. Vac. Sci. Technol. B4, 1014 (1986).

    Google Scholar 

  8. H. Sakaki, T. Nada, K. Hirakawa, M. Tanaka, and T. Matsusue; Appl. Phys. Lett. 51, 1934 (1987)

    Article  CAS  Google Scholar 

  9. Appl. Phys. Lett. 57, 1651 (1990).

    Article  Google Scholar 

  10. N.M. Cho, S.B. Ogale, and A. Madhukar; Appl. Phys. Lett. 51, 1016 (1987).

    Article  CAS  Google Scholar 

  11. J.H. Neave, B.A. Joyce, P.J. Dobson, and N. Norton; Appl. Phys. A31, 631 (1983).

    Google Scholar 

  12. M. H. Herman, D. Bimberg, and J. Christen, J. Appl. Phys. 70, R1 (1991)

    Article  CAS  Google Scholar 

  13. J. Christen, Advances in Solid State Physics 30, (U. Rösler ed.) Vieweg, Braunschweig 1990, p. 239.

    Google Scholar 

  14. J. Christen, M. Grundmann, and D. Bimberg; J. Vac. Sci. Technol. B9, 2358 (1991).

    Google Scholar 

  15. A. Ourmazd, F.H. Baumann, M. Bode, and Y. Kim; Ultramicroscopy 34, 237 (1990).

    Article  Google Scholar 

  16. A. Ourmazd, J. Cryst. Growth 98, 72 (1989).

    Article  CAS  Google Scholar 

  17. M. Bode, A. Ourmazd, J. Cunningham, and M. Hong; Phys. Rev. Lett 67, 843 (1991).

    Article  CAS  Google Scholar 

  18. N. Ikarashi, M. Tanaka, H. Sakaki, and K. Ishida; Appl. Phys. Lett. 60, 1360 (1992).

    Article  CAS  Google Scholar 

  19. D. Bimberg, F. Heinrichsdorff, R.K. Bauer, D. Gerthsen, D. Stenkamp, D.E. Mara, and J.N. Miller; J. Vac. Sci. Technol. B10, 1793 (1992) and ibid B11, 126 (1993).

    Google Scholar 

  20. R.F. Kopf, E.F. Schubert, T.D. Harris, R.S. Becker; Appl. Phys. Lett. 58, 631 (1991).

    Article  CAS  Google Scholar 

  21. C.A. Warwick, W.Y. Jan, A. Ourmazd, and T.D. Harris; Appl. Phys. Lett. 56, 2666 (1990).

    Article  CAS  Google Scholar 

  22. D. Gammon, B.V. Shanabrock, and D.S. Katzer; Appl. Phys. Lett. 57, 2710 (1990).

    Article  CAS  Google Scholar 

  23. D. Gammon, B.V. Shanabrock, and D.S. Katzer, Phys. Rev. Lett. 67, 1547 (1991).

    Article  CAS  Google Scholar 

  24. C.A. Warwick and R.F. Kopf; Appl. Phys. Lett. 60, 386 (1992).

    Article  Google Scholar 

  25. U. Morlock, J. Christen, D. Bimberg, E. Bauser, H.J. Queisser, and A. Ourmazd; Phys. Rev. B44, 8792 (1991).

    Google Scholar 

  26. R. Köhrbrück, S. Munnix, D. Bimberg, D.E. Mars, and J.N. Miller; J. Vac. Sci. Technol. B8, 789 (1990)

    Google Scholar 

  27. Appl. Phys. Lett. 57, 1025 (1990).

    Article  Google Scholar 

  28. P.M. Petroff, A.Y. Cho, F.K. Reinhart, A.C. Gossard, and W. Wiegmann; Phys. Rev. Lett. 48, 170 (1982).

    Article  CAS  Google Scholar 

  29. M.B. Panish, H.C. Casey; J. Appl. Phys. 40, 163 (1968).

    Article  Google Scholar 

  30. D.B. Tran Thoai, R. Zimmermann, M. Grundmann, and D. Bimberg; Phys. Rev. B41, 5906 (1990).

    Google Scholar 

  31. G. Bastard and J.A. Brum; IEEE J. Quant Electron., QE22, 1625 (1980).

    Google Scholar 

  32. C.W. Tu, R.C. Miller, P.M. Petroff, R.F. Kopf, B. Deveaud, T.C. Damen, and J. Shah; J. Vac. Sci. Technol. B6, 610 (1988).

    Google Scholar 

  33. H. Hillmer, A. Forchel, R. Sauer, C.W. Tu; Phys. Rev. B42, 3220 (1990).

    Google Scholar 

  34. J. Christen, D. Bimberg, A. Steckenborn, and G. Weimann; Appl. Phys. Lett. 44, 84 (1984)

    Article  CAS  Google Scholar 

  35. D. Bimberg, J. Christen, A. Steckenborn, G. Weimann and W. Schlapp, J. Lumin. 30, 562 (1985).

    Article  CAS  Google Scholar 

  36. C. Colvard, D. Bimberg, R.K. Bauer, D.E. Mars, and J.N. Miller; Phys. Rev. B39, 3419 (1989).

    Google Scholar 

  37. S. Permogorov, A. Naumov, G. Gourdon, and P. Lavallard; Solid State Commun. 74, 1057 (1990).

    Article  CAS  Google Scholar 

  38. M.S. Skolnick, T.D. Harris, C.W. Tu, T.M. Brennan, and M.D. Sturge; Appl. Phys. Lett. 46, 427 (1985).

    Article  CAS  Google Scholar 

Download references

Author information

Author notes

  1. J. Christen

    Present address: Otto-von-Guericke Universität, 30916, Magdeburg, Germany

  2. D. Gerthsen

    Present address: Laboratorium für Elektronenmikroskopie der Universität, Kaiserstr. 12, 76128, Karlsruhe, Germany

Authors and Affiliations

  1. Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, 10623, Berlin, Germany

    D. Bimberg, J. Christen & W. Wittke

  2. Institut für Festkörperforschung, Forschungszentrum Jülich, Germany

    D. Gerthsen & D. Stenkamp

  3. Hewlett-Packard Laboratories, Palo Alto, California, USA, 94303

    D. E. Mars & J. N. Miller

Authors
  1. D. Bimberg
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. J. Christen
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. W. Wittke
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. D. Gerthsen
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. D. Stenkamp
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. D. E. Mars
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. J. N. Miller
    View author publications

    You can also search for this author in PubMed Google Scholar

Editor information

Editors and Affiliations

  1. University of Newcastle, Callaghan, NSW, 2308, Australia

    R. J. MacDonald

  2. Max-Planck-Institut für Plasmaphysik, Boltzmannstr. 2, D-85748, Garching, Germany

    E. C. Taglauer

  3. Institut für Physikalische und Theoretische Chemie, Universität Bonn, Wegelerstr. 12, D-53115, Bonn, Germany

    K. R. Wandelt

Rights and permissions

Reprints and permissions

Copyright information

© 1996 Springer-Verlag Berlin Heidelberg

About this chapter

Cite this chapter

Bimberg, D. et al. (1996). Atomically Abrupt Interfaces of Compound Semiconductor Heterostructures: The AlAs/GaAs Case. In: MacDonald, R.J., Taglauer, E.C., Wandelt, K.R. (eds) Surface Science. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-80281-2_21

Download citation

  • DOI: https://doi.org/10.1007/978-3-642-80281-2_21

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-80283-6

  • Online ISBN: 978-3-642-80281-2

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics

Search

Navigation