Damage Analysis of Semiconductor Chip during Wire Bonding Process

  • Toru Ikeda
  • Noriyuki Miyazaki
  • Kiyoteru Kudo
  • Tsuyoshi Munakata
Conference paper

Abstract

Wire bonding, a process for connection between a semiconductor chip and a lead frame by thin metal wire, is one of the important processes of electronic packaging. Figure 1 shows a silicon chip connected with a lead frame by gold wire. The gold wire bonding process is performed as shown in Figure 2. (1) A tip of gold wire put out from a capillary is melted by an electric torch, and takes a ball shape by its surface tension. (2) A capillary goes down and presses the gold ball on an aluminum terminal set on a semiconductor chip. (3) The capillary is vibrated by ultra sonic for connecting the gold ball with the aluminum terminal. (4) The capillary moves and mashes the gold wire on a lead finger. The quick wire bonding process shorter than 0.1 seconds is desired for high performance of a wire bonding machine. High contact pressure is useful for shortening the process cycle, but it sometimes causes the damage of the semiconductor chip. Especially, a GaAs chip is easy to be broken. This paper presents the damage estimation of a GaAs chip during the gold wire bonding process.

Keywords

GaAs Gallium Arsenide 

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References

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    J. S. Blakemore, Semiconducting and other major properties of gallium arsenide, J. Appl Phys., Vol. 53 No. 10 (1982), R123-R128.CrossRefGoogle Scholar
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    H. E. Belsinger Jr, B. Wilner, U. Tasch and L. D. T. Topoleski, A Fracture Criterion For Gallium Arsenide Wafers, Engng Frac. Mech., Vol. 48 No. 2 (1994), pp. 199–205.CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1995

Authors and Affiliations

  • Toru Ikeda
    • 1
  • Noriyuki Miyazaki
    • 1
  • Kiyoteru Kudo
    • 1
  • Tsuyoshi Munakata
    • 1
  1. 1.Department of Chemical Engineering, Faculty of EngineeringKyushu UniversityJapan

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