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Damage Analysis of Semiconductor Chip during Wire Bonding Process

  • Toru Ikeda
  • Noriyuki Miyazaki
  • Kiyoteru Kudo
  • Tsuyoshi Munakata
Conference paper

Abstract

Wire bonding, a process for connection between a semiconductor chip and a lead frame by thin metal wire, is one of the important processes of electronic packaging. Figure 1 shows a silicon chip connected with a lead frame by gold wire. The gold wire bonding process is performed as shown in Figure 2. (1) A tip of gold wire put out from a capillary is melted by an electric torch, and takes a ball shape by its surface tension. (2) A capillary goes down and presses the gold ball on an aluminum terminal set on a semiconductor chip. (3) The capillary is vibrated by ultra sonic for connecting the gold ball with the aluminum terminal. (4) The capillary moves and mashes the gold wire on a lead finger. The quick wire bonding process shorter than 0.1 seconds is desired for high performance of a wire bonding machine. High contact pressure is useful for shortening the process cycle, but it sometimes causes the damage of the semiconductor chip. Especially, a GaAs chip is easy to be broken. This paper presents the damage estimation of a GaAs chip during the gold wire bonding process.

Keywords

Gallium Arsenide Maximum Principal Stress Wire Bonding Gold Wire Strain Rate Dependence 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. [1]
    J. S. Blakemore, Semiconducting and other major properties of gallium arsenide, J. Appl Phys., Vol. 53 No. 10 (1982), R123-R128.CrossRefGoogle Scholar
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    H. E. Belsinger Jr, B. Wilner, U. Tasch and L. D. T. Topoleski, A Fracture Criterion For Gallium Arsenide Wafers, Engng Frac. Mech., Vol. 48 No. 2 (1994), pp. 199–205.CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1995

Authors and Affiliations

  • Toru Ikeda
    • 1
  • Noriyuki Miyazaki
    • 1
  • Kiyoteru Kudo
    • 1
  • Tsuyoshi Munakata
    • 1
  1. 1.Department of Chemical Engineering, Faculty of EngineeringKyushu UniversityJapan

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