Abstract
In this chapter, we examine the fabrication of actual laser devices and the relevant characterization techniques. The design criteria stated in Chap. 3 should be checked as the first step of device evaluation. Measurement of fundamental laser parameters such as voltage/current curves, threshold current density and spectral characteristics describe the important material properties of grown wafers. The measurement results also provide useful feedback for subsequent epitaxial growths.
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© 1996 Springer-Verlag Berlin Heidelberg
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Iga, K., Kinoshita, S. (1996). Semiconductor-Laser Devices — Fabrication and Characteristics. In: Process Technology for Semiconductor Lasers. Springer Series in Materials Science, vol 30. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-79576-3_8
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DOI: https://doi.org/10.1007/978-3-642-79576-3_8
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-79578-7
Online ISBN: 978-3-642-79576-3
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