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Nonlinear and Chaotic Charge Transport in Semi-Insulating Semiconductors

  • V. A. Samuilov
Part of the Springer Proceedings in Physics book series (SPPHY, volume 79)

Abstract

Recent experimental results on spontaneous periodic and chaotic low frequency current oscillations in semi-insulating crystalline semiconductors are reviewed. Period-doubling bifurcations and intermittent chaotic behavior were observed, depending on the value of the applied voltage. The dependencies of the fundamental frequency of low frequency current oscillations on the applied voltage were found to be sharply nonmonotonical in the samples of GaAs with controlled and different EL2 defect concentrations. Temperature dependencies of frequency modes (f) on an Arrhenius plot of log(T2/2f) vs. 1/T were found to give information on deep levels in InP.

The experimental results of nonlinear charge transport and low frequency current oscillations in spatially chaotic polycrystalline and nanostructured fractal-like porous Si are also presented. The dependencies of the fundamental frequency on the applied voltage were found to be monotonically increasing in these materials. The transition to chaotic behavior through quasi-periodic route was observed in polycrystalline Si. Semi-insulating polycrystalline Si and porous Si are likely to present a new class of materials for experimental investigations of phenomena concerning nonlinear dynamics.

A model of low frequency current oscillations in semi-insulating crystalline semiconductors with deep levels has been developed. A combination of the approaches of field-enhanced trapping, field-enhanced emission and negative differential mobility of carriers was used. A linear analysis of the model was done. The dispersion relations of the model were found to describe qualitatively the experimentally measured dependencies of the activation energies and of the fundamental frequency on the electric field and the temperature.

Keywords

Applied Voltage Fundamental Frequency Capture Cross Section High Electric Field Chaotic Oscillation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. [10.1]
    Y. Abe (ed.): Appl. Phys. A 48, 93 (1989)Google Scholar
  2. [10.2]
    R.P. Huebener, J. Peinke, J. Parisi: Appl. Phys. A 48, 107 (1989)CrossRefGoogle Scholar
  3. [10.3]
    E. Schóll: Nonequilibrium Phase Transitions in Semiconductors ( Springer-Verlag, Berlin 1987 )CrossRefGoogle Scholar
  4. [10.4]
    J. Peinke, J. Parisi, O.E. Rössler, R. Stoop: Encounter with Chaos ( Springer-Verlag, Berlin 1992 )CrossRefGoogle Scholar
  5. [10.5]
    E. Schöll: In Handbook on Semiconductors, Vol. 1, 2nd ed., ed. by P.T. Landsberg (Elsevier, Amsterdem 1992 ) pp. 419–447Google Scholar
  6. [10.6]
    M.P. Shaw, V.V. Mitin, E. Schöll, H.L. Grubin: The Physics of Instabilities in Solid State Electron Devices ( Plenum Press, New York 1992 )Google Scholar
  7. [10.7]
    E. Schöll: Physica Scripta T29, 152 (1989)CrossRefGoogle Scholar
  8. [10.8]
    E. Schöll: Appl. Phys. A 48, 95 (1989)CrossRefGoogle Scholar
  9. [10.9]
    E. Schöll: J. Phys. Chem. Solids 49, 651 (1989)CrossRefGoogle Scholar
  10. [10.10]
    H.K. Sacks, A.G. Milnes: Int. J. Elect. 28, 565 (1970)CrossRefGoogle Scholar
  11. [10.11]
    K. Pyragas, Yu. Pozhela, A. Tamashyavchyus, Yu. Ul’bikas: Soy. Phys. Semicond. 21, 335 (1987)Google Scholar
  12. [10.12]
    D.A. Johnson, R.A. Puechner, G.N. Maracas: J. Appl. Phys. 67, 300 (1990)CrossRefGoogle Scholar
  13. [10.13]
    S.P. McAlister, Z.-M. Li, D.J. Day: Canadian J. Phys. 69, 207 (1991)CrossRefGoogle Scholar
  14. [10.14]
    H. Goronkin, G.N. Maracas: In Proc. IEDM Conf. (1984) pp. 182–185.Google Scholar
  15. [10.15]
    G.N. Maracas, D.A. Johnson, H. Goronkin: Appl. Phys. Lett. 46, 305 (1985)CrossRefGoogle Scholar
  16. [10.16]
    D.J. Miller, M. Bujatti: IEEE Trans. ED-34, 1239 (1987)Google Scholar
  17. [10.17]
    G.N. Maracas, D.A. Johnson, R.A. Puechner, J.L. Edwards, S. Myhailenko, H. Goronkin, R. Tsui: Solid State Electr. 32, 1887 (1989)CrossRefGoogle Scholar
  18. [10.18]
    D.J. Day, M. Trudeau, S.P. McAlister, C.M. Hurd: Appl. Phys. Lett. 52, 2034 (1988)CrossRefGoogle Scholar
  19. [10.19]
    W. Knap, M. Jesewski, J. Lusakovski, W. Kuszko: Solid State Electr. 31, 813 (1988)CrossRefGoogle Scholar
  20. [10.20]
    K.Karpierz, J. Lusakowski, W. Knap: Acta Physica Polonica A75, 207 (1989)Google Scholar
  21. [10.21]
    C. Backhouse, V.A. Samuilov, L. Young: Appl. Phys. Lett. 60, 2906 (1992)CrossRefGoogle Scholar
  22. [10.22]
    C. Backhouse, L. Young: Solid State Electr. 35, 1601 (1992)CrossRefGoogle Scholar
  23. [10.23]
    W. Walukiewicz, J. Lagowski, H.C. Gatos: Appl. Phys. Lett. 43, 192 (1983)CrossRefGoogle Scholar
  24. [10.24]
    S. Maimon, S.E. Schacham: J. Appl. Phys. 75, 2035 (1994)CrossRefGoogle Scholar
  25. [10.25]
    D. Richter, A.J. Dianoux, W. Petry, J. Teixeira (eds.): Dynamics of Disordered Materials ( Springer-Verlag, Berlin 1989 )Google Scholar
  26. [10.26]
    R. Schilling: In Nonlinear Dynamics in Solids, ed. by H. Thomas (Springer-Verlag, Berlin 1992)Google Scholar
  27. [10.27]
    Chao Chen, V.A. Samuilov, T.M. Veselova: In Proc. 8th Conf. on SemiInsulating III-V Materials (Warsaw, Poland, June 6–10, 1994 ) in printGoogle Scholar
  28. [10.28]
    Chao Chen, V.A. Samuilov, T.M. Veselova: In Proc. of the Third annual Seminar on Nonlinear Phenomena in Complex Systems, ed. by G. Krylov, V. Kuvshinov (Polatsk, Belarus, February 14–16, 1994 ) in printGoogle Scholar
  29. [10.29]
    V.A. Samuilov, V.A. Dorosinetz, N.A. Poklonski, V.F. Stelmakh: In Proc. of the First Intl Conf. on Electronic Materials. New Materials and New Physical Phenomena for Electronics of the 21st Century (MRS, Pittsburg, Pensilvania 1989 ) pp. 233–236Google Scholar
  30. [10.30]
    V.A. Dorosinets, N.A. Poklonskii, V.A. Samuilov, V.F. Stelmakh: Sov. Phys. Semicond. 22, 476 (1988)Google Scholar
  31. [10.31]
    V.A. Samuilov, E.A. Bondarionok, V.P. Bondarenko, A.M. Dorofeev, G.M. Troyanova: In Proc. of the Third annual Seminar on Nonlinear Phenomena in Complex Systems, ed. by G. Krylov, V. Kuvshinov (Polatsk, Belarus, February 14–16, 1994 ) in printGoogle Scholar
  32. [10.32]
    V.A. Samuilov, T.M. Veselova: In Proc. of the second annual Seminar on Nonlinear Phenomena in Complex Systems ( Polatsk, Belarus, February 1517, 1993 ) in printGoogle Scholar
  33. [10.33]
    V.A. Samuilov, T.M. Veselova: In Proc. 8th Conf. on Semi-Insulating III-V Materials (Warsaw, Poland, June 6–10, 1994 ) in printGoogle Scholar
  34. [10.34]
    V.A. Samuilov, E.A. Bondarionok, D. Shulman, D.L. Pulfrey: IEEE Electron Device Letters 13, 396 (1992)CrossRefGoogle Scholar
  35. [10.35]
    V.A. Samuilov, E.A. Bondarionok, N.A. Poklonski: In Proc. of the second annual Seminar on Nonlinear Phenomena in Complex Systems (Polatsk, Belarus, February 15–17, 1993 ) in printGoogle Scholar
  36. [10.36]
    D.L. Pulfrey, D. Shulman, V.A. Samuilov, E. Bondarionok, V. Krasnitski, N. Poklonski, V. Stelmakh: Inverted Heterojunction Bipolar Device Having Undoped Amorphous Silicon Layer (US Patent No. 5,285,083, issued February 8, 1994 )Google Scholar
  37. [10.37]
    A.A. Reeder, I.P. Thomas, C. Smith, J. Wittgreffe, D.J. Godfrey, J. Hajto, A.E. Owen, A.J. Snell, A.F. Murray, M.J. Rose, I.S. Osborne, P.G. LeComber: In Proceedings of MRS’92 Spring Meeting (MRS, San Francisco 1992)Google Scholar
  38. [10.38]
    G.M. Martin, J.P. Farges, G. Jacob, J.P. Hallais, G. Poiblaud: J. Appl. Phys. 51, 2840 (1980)CrossRefGoogle Scholar
  39. [10.39]
    G. Muller, D. Hoffmann, P. Kipfer, F. Mosel: In Proc. 2nd Intl Conf. on Indium Phosphide and Related Materials ( Denver, Colorado 1990 ) pp. 21–24Google Scholar
  40. [10.40]
    Chao Chen, V.A. Bykovski, M.I. Tarasik: Sov. Phys. Semicond. 28, 35 (1994)Google Scholar
  41. [10.41]
    L.L. Kazmerski (ed.): Polycrystalline and Amorphous Thin Films and Devices ( Academic Press, New York 1980 )Google Scholar
  42. [10.42]
    D.J. Bartelink: In Proc. Materials Research Society Annual Meeting on Grain Boundaries in Semiconductors, ed. by H.J. Leamy, G.E. Pike, C.H. Seager (North Holland, New York 1982) pp. 249–260Google Scholar
  43. [10.43]
    M. Peisl, A.W. Wieder: IEEE Trans. ED-30, 1792 (1983)Google Scholar
  44. [10.44]
    J.Y.W. Seto: J. Appl. Phys. 46, 5247 (1975)CrossRefGoogle Scholar
  45. [10.45]
    N.C.-C. Lu, L. Gerzberg, C.Y. Lu, J.D. Meindl: IEEE Trans. ED-30, 137 (1983)Google Scholar
  46. [10.46]
    L.T. Canham: Appl. Phys. Lett. 57, 1046 (1990)CrossRefGoogle Scholar
  47. [10.47]
    R.L. Smith, S.D. Coffins: J. Appl. Phys 71, R1 (1992)CrossRefGoogle Scholar
  48. [10.48]
    P.C. Searson, J.M. Macaulay: Nanotechnology 3, 188 (1992)CrossRefGoogle Scholar
  49. [10.49]
    A.G. Cullis, L.T. Canham: Nature 353, 335 (1991)CrossRefGoogle Scholar
  50. [10.50]
    J.C. Vial, S. Billat, A. Bsiesy, G. Fishman, F. Gaspard, R. Herino, M. Ligeon, F. Madeore, I. Mihalcescu, F. Muller, R. Romestain: Physica B 185, 583 (1993)CrossRefGoogle Scholar
  51. [10.51]
    A. Richter, P. Steiner, F. Kozlowski, W. Lang: IEEE Electron Device Letters 12, 691 (1991)CrossRefGoogle Scholar
  52. [10.52]
    F. Namavar, H.P. Maruska, N.M. Kalkhoran: Appl. Phys. Lett. 60, 2514 (1992)CrossRefGoogle Scholar
  53. [10.53]
    Z. Chen, G. Bosman, R. Ochoa: Appl. Phys. Lett. 62, 708 (1993)CrossRefGoogle Scholar
  54. [10.54]
    P. Steiner, F. Kozlowski, W. Lang: IEEE Electron Device Letters 14, 317 (1994)CrossRefGoogle Scholar
  55. [10.55]
    J. Wang, F.-L. Zhang, W.-C. Wang, J.-B. Zheng, X.-Y. Hou, X. Wang: J. Appl. Phys. 75, 1070 (1994)CrossRefGoogle Scholar
  56. [10.56]
    H.P. Maruska, F. Namavar, N.M. Kalkhoran: Appl. Phys. Lett. 61, 1338 (1992)CrossRefGoogle Scholar
  57. [10.57]
    H.P. Maruska, F. Namavar, N.M. Kalkhoran: Appl. Phys. Lett. 63, 45 (1993)CrossRefGoogle Scholar
  58. [10.58]
    C. Cadet, D. Deresmes, D. Vuillaume, D. Stievenard: Appl. Phys. Lett. 64, 2827 (1994)CrossRefGoogle Scholar
  59. [10.59]
    X. Chen, B. Henderson, K.P. O’Donnel: Appl. Phys. Lett. 60, 2672 (1992)CrossRefGoogle Scholar
  60. [10.60]
    X. Chen, D. Uttamchandani, D. Sander, K.P. O’Donnel: Physica B 183, 603 (1993)CrossRefGoogle Scholar
  61. [10.61]
    C.C. Yen, K.Y.J. Hsu, L.K. Samanta, P.C. Chen, H.L. Hwang: Appl. Phys. Lett. 62, 1617 (1993)CrossRefGoogle Scholar
  62. [10.
    ] B. Willing, J.C. Maan: Phys. Rev. Lett., to be publishedGoogle Scholar
  63. [10.63]
    G.N. Maracas, W. Porod, D.A. Johnson, D.K. Ferry, H. Goronkin: Physica B 134, 276 (1985)CrossRefGoogle Scholar
  64. [10.64]
    F.-J. Niedernostheide, B.S. Kerner, H.-G. Purwins: Phys. Rev. B 46, 7559 (1992)CrossRefGoogle Scholar
  65. [10.65]
    U. Rau, J. Peinke, J. Parisi, K. Karpierz, J. Lusakovski, W. Knap: Phys. Lett. A 152, 356 (1991)CrossRefGoogle Scholar
  66. [10.66]
    W. Pres, B. Flannery, S. Teukovsky, W. Vetterling: Numerical Recipies in C - The Art of Scientific Computing (Univ. Press, Cambridge 1988 )Google Scholar
  67. [10.67]
    D.J. Day, M. Trudeau, S.P. McAlister, C.M. Hurd: Appl. Phys. Lett. 52, 2034 (1988)CrossRefGoogle Scholar
  68. [10.68]
    T. Takanohashi, K. Nakai, K. Nakagima: Japan. J. Appl. Phys. 27, L113 (1988)CrossRefGoogle Scholar
  69. [10.69]
    D.L. Look: Solid State Commun. 33, 237 (1980)CrossRefGoogle Scholar
  70. [10.70]
    L.D. Landau: Akad. Nauk Doklady 44, 339 (1944)Google Scholar
  71. [10.71]
    D. Ruelle, F. Takens: Commum. Math. Phys. 20, 167 (1971); 23, 344 (1971)Google Scholar
  72. [10.72]
    P. Grassberger, I. Procaccia: Phys. Rev. Lett. 50, 346 (1983)CrossRefGoogle Scholar
  73. [10.73]
    S. Bumeliene, K. Pyragas, A. Cenys: Soy. Phys. Semicond. 24, 1509 (1990)Google Scholar
  74. [10.74]
    A. Cenys, K. Pyragas: Phys. Lett. A 129, 227 (1988)CrossRefGoogle Scholar
  75. [10.75]
    N.G. Zhdanova, M.S. Kagan: Sov. Phys. Semicond. 15, 99 (1981)Google Scholar
  76. [10.76]
    N.G. Zhdanova, M.S. Kagan, S.G. Kalashnikov: Soy. Phys. Semicond. 17, 1182 (1983)Google Scholar
  77. [10.77]
    N.C.-C. Lu, L. Gerzberg, C.Y. Lu, J.D. Meindl: IEEE Trans. ED-28, 818 (1981)Google Scholar
  78. [10.78]
    A.J. Madenach, J. Werner, F.J. Stutzler: In Proc. 18th IEEE Photovoltaic Specialists Conf. (Las Vegas, Nevada, October 21–25, 1985 ) pp. 1088–1093Google Scholar
  79. [10.79]
    P.T. Landsberg, M.S. Abrahams: J. Appl. Phys. 55, 4284 (1984)CrossRefGoogle Scholar
  80. [10.80]
    E. Schöll: J. Appl. Phys. 60, 1434 (1986)CrossRefGoogle Scholar
  81. [10.81]
    S. Newhouse, D. Ruelle, F. Takens: Commun. Math. Phys. 64, 35 (1978)CrossRefGoogle Scholar
  82. [10.82]
    V.L. Bonch-Bruevich: Dokl. AN SSSR 278, 335 (1984)Google Scholar
  83. [10.83]
    R.D. Peters: Phys. Lett. A 174, 216 (1993)CrossRefGoogle Scholar
  84. [10.84]
    H.C. de Graaf, M.T.M. Huybers: J. Appl. Phys. 54, 2504 (1983)CrossRefGoogle Scholar
  85. [10.85]
    N.S. Minaev, N.A. Poklonski, V.F. Stelmakh, V.D. Tkatchev: Sov. Phys. Semicond. 8, 1076 (1974)Google Scholar
  86. [10.86]
    H. Haken: Synergetics. An Introduction ( Springer, Berlin 1978 )Google Scholar
  87. [10.87]
    A. Cenis, G. Lasiene, K. Pyragas: Solid State Electr. 35, 975 (1992)CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1995

Authors and Affiliations

  • V. A. Samuilov
    • 1
  1. 1.Physics DepartmentBelarus State UniversityMinskRepublic Belarus

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