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Fabrication of N-AlGaAs/GaAs Edge Quantum Wires on (118)B Facets with Gate-Electrode and Density Modulation of One-Dimensional Electrons

  • Y. Nakamura
  • M. Tsuchiya
  • J. Motohisa
  • H. Noge
  • S. Koshiba
  • H. Sakaki
Conference paper
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 31)

Abstract

An N-AlGaAs/GaAs edge quantum wire (EQWI) structure with an effective width of 80–90 nm has been successfully prepared on a patterned substrate by an ensemble of several unique techniques in molecular beam epitaxy (MBE). The magnetic depopulation of one-dimensional (1D) subbands was clearly observed, indicating presence of the lateral quantum confinement by heterointerfaces. In addition, a gate electrode was successfully formed on the EQWI, resulting in a modulation of such 1D electron density.

Keywords

Molecular Beam Epitaxy Quantum Well Density Modulation Metal Organic Chemical Vapor Deposition Gate Electrode 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1994

Authors and Affiliations

  • Y. Nakamura
    • 1
    • 2
  • M. Tsuchiya
    • 1
    • 2
  • J. Motohisa
    • 1
    • 2
  • H. Noge
    • 1
    • 2
  • S. Koshiba
    • 1
    • 2
  • H. Sakaki
    • 1
    • 2
  1. 1.Quantum Wave ProjectJRDCMeguro-ku, Tokyo 153Japan PG
  2. 2.RCASTUniversity of TokyoMeguro-ku, Tokyo 153Japan

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