Fabrication of N-AlGaAs/GaAs Edge Quantum Wires on (118)B Facets with Gate-Electrode and Density Modulation of One-Dimensional Electrons
An N-AlGaAs/GaAs edge quantum wire (EQWI) structure with an effective width of 80–90 nm has been successfully prepared on a patterned substrate by an ensemble of several unique techniques in molecular beam epitaxy (MBE). The magnetic depopulation of one-dimensional (1D) subbands was clearly observed, indicating presence of the lateral quantum confinement by heterointerfaces. In addition, a gate electrode was successfully formed on the EQWI, resulting in a modulation of such 1D electron density.
KeywordsMolecular Beam Epitaxy Quantum Well Density Modulation Metal Organic Chemical Vapor Deposition Gate Electrode
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