Fabrication of N-AlGaAs/GaAs Edge Quantum Wires on (118)B Facets with Gate-Electrode and Density Modulation of One-Dimensional Electrons

  • Y. Nakamura
  • M. Tsuchiya
  • J. Motohisa
  • H. Noge
  • S. Koshiba
  • H. Sakaki
Conference paper
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 31)

Abstract

An N-AlGaAs/GaAs edge quantum wire (EQWI) structure with an effective width of 80–90 nm has been successfully prepared on a patterned substrate by an ensemble of several unique techniques in molecular beam epitaxy (MBE). The magnetic depopulation of one-dimensional (1D) subbands was clearly observed, indicating presence of the lateral quantum confinement by heterointerfaces. In addition, a gate electrode was successfully formed on the EQWI, resulting in a modulation of such 1D electron density.

Keywords

Migration GaAs Haas Kano 

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Copyright information

© Springer-Verlag Berlin Heidelberg 1994

Authors and Affiliations

  • Y. Nakamura
    • 1
    • 2
  • M. Tsuchiya
    • 1
    • 2
  • J. Motohisa
    • 1
    • 2
  • H. Noge
    • 1
    • 2
  • S. Koshiba
    • 1
    • 2
  • H. Sakaki
    • 1
    • 2
  1. 1.Quantum Wave ProjectJRDCMeguro-ku, Tokyo 153Japan PG
  2. 2.RCASTUniversity of TokyoMeguro-ku, Tokyo 153Japan

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