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A Shock Tube Study of the Oxidation of Silicon Atoms by NO and CO2

  • Hans Jürgen Mick
  • Paul Roth
Conference paper

Abstract

In the present investigation the very fast thermal dissociation of silane at temperatures above 1800 K was used as a Si atom source to study its reactions with NO and CO2. In the first part experiments in mixtures of 0.5 to 10 ppm SiH4 and 75 to 300 ppm NO diluted in argon were performed. Absorption profiles of the atomic species Si, N, and O were measured in the temperature range 1600 K ≤ T ≤ 3200 K at pressures 0.4 bar ≤ p ≤ 1.5 bar. The measured Si atom absorption profiles were analysed by assuming a first-order type reaction. From the present measurements the rate coefficient of the reaction
$$Si + NOSiO + N$$
(R3)
$${k_3} = 3.2 \times {10^{13}}\exp ( - 1775K/T) \pm 30\% c{m^3}mo{l^{ - 1}}{s^{ - 1}}$$
was determined. In addition, N and O atom concentration profiles were observed confirming the correctness of reaction channel (R3).
In the second part of the paper Si atom measurements were performed in mixtures containing 0.5 to 0.75 ppm SiH4 and 200 PPM CO2 diluted in argon. The experimental conditions were 2000 K ≤ T ≤ 3200 K and 0.4 bar ≤ p ≤ 1.5 bar. Again the first-order assumption was used to determine the rate coefficient of the reaction
$$Si + N{O_2}SiO + CO$$
(R6)
$${k_6} = 6.0 \times {10^{14}}\exp ( - 9420K/T) \pm 30\% c{m^3}mo{l^{ - 1}}{s^{ - 1}}$$

from Si atom measurements.

Key words

Oxidation Silicon atoms 

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References

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Copyright information

© Springer-Verlag Berlin Heidelberg 1995

Authors and Affiliations

  • Hans Jürgen Mick
    • 1
  • Paul Roth
    • 1
  1. 1.Institut für Verbrennung and GasdynamikUniversität DuisburgDuisburgGermany

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