Summary
The properties of the Fermi glass state in partially doped insulating cuprates are reviewed. The localized electronic states near the Fermi energy (E F) are characterized through dark transport and transient photodoping experiments. For insulating crystals close to the metal-insulator (M-I) transition, the density of localized states at the Fermi energy, N(E F), inferred from various experiments, is of the order of 1021cm−3eV−1. The experimental results suggest an Anderson-type M-I transition in the doped cuprates; i.e., the transition from metal to insulator is dominated by disorder-induced localization. Supporting evidence from angular- resolved photoemission, NQR and other experiments are also discussed. The Fermi glass state has also been studied spectroscopically. In partially doped YBa2Cu3O6.3, the optical absorption observed throughout the infrared has no counterpart in photoconductive response σph (ω); transitions below 2 eV do not create mobile carriers. The spectral gap in σph (ω) corresponds to the mobility gap in this material.
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Yu, G., Lee, C.H., Heeger, A.J. (1994). Fermi Glass State in Partially Doped Insulating Cuprates. In: Sigmund, E., Müller, K.A. (eds) Phase Separation in Cuprate Superconductors. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-78805-5_11
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