Abstract
Heterojunctions are formed from two adjoining semiconductor crystals with different bandgap energies. One distinguishes junctions of the same conduction type (n-n, p-p) from junctions of different type (p-n). In the ideal case we have an abrupt junction between the materials. In practice junctions may occur within a few (2 or 3) atomic layers. With lattice mismatching (> 0.1%) of the two semiconductors defects are formed at the interface, which lead to considerable deviations from the ideal behavior of a heterojunction.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Casey, H.C.; Panish, M.B.: Heterostructure Lasers. Part A. New York: Academic Press 1978
Unger, H.-G.; Schultz, W.; Weinhausen, G.: Elektronische Bauelemente und Netzwerke. Braunschweig: Vieweg 1979
Sze, S.M.: Physics of semiconductor devices. New York: Wiley and Sons 1981
Kroemer, H.: Theory of heterojunctions: A critical review. In: Chang, L.L.; Ploog, H. (Eds.): Molecular Beam Epitaxy and Heterostructures. Dordrecht: Martinus Nijhoff Publishers 1985
Anderson, R.L.: Experiments on Ge-GaAs Heterojunctions. Solid State Electronics 5 (1962) 341–351
Michalzik, R.: Charakteristiken von Heteroübergängen im Al0.3Ga0.7AsGaAs System. Studienarbeit. Institut für Hochfrequenztechnik, Technische Universität Braunschweig 1989
Author information
Authors and Affiliations
Rights and permissions
Copyright information
© 1993 Springer-Verlag Berlin Heidelberg
About this chapter
Cite this chapter
Ebeling, K.J. (1993). Heterojunctions. In: Integrated Optoelectronics. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-78166-7_9
Download citation
DOI: https://doi.org/10.1007/978-3-642-78166-7_9
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-78168-1
Online ISBN: 978-3-642-78166-7
eBook Packages: Springer Book Archive