Wide Bandgap II–VI Light Emitting Devices
The prospect of wide bandgap light emitting diodes (LEDs) and lasers has been transformed by recent advances in p-doping in materials such as ZnSe grown by molecular beam epitaxy. We report the growth of p-n ZnSe junctions on GaAs substrates using iodine as the n-type dopant and nitrogen from a plasma discharge source as the p-type dopant. LEDs have been fabricated using a gold contact to the p-type layer and blue CW emission has been observed under forward bias. Stripe geometry laser structures have been fabricated and blue stimulated emission has been observed for the first time at low temperatures.
KeywordsMolecular Beam Epitaxy GaAs Substrate Forward Bias Diode Structure Gold Contact
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