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Optical Properties of Quantum Wells

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Gas Source Molecular Beam Epitaxy

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 26))

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Abstract

High-quality quantum wells of Ga x In1−x As1−y P y /InP have become available in the last few years. These heterostructures have been prepared by a number of epitaxial methods ranging from ESMBE [7.1], through several GSMBE methods, to low and atmospheric pressure MOCVD. The GSMBE and MOCVD methods have achieved the reproducibility and precision of multilayer epitaxy of GaInAs(P), which have been previously reserved only for the GaAs/Al x Ga1−x As system. In the discussion of the optical properties of Ga x In1−x As y P1−y quantum wells we shall rely primarily on the results obtained on the structures grown by HSMBE with which we are most familiar. However, notable examples of the work carried out on structures grown by MOMBE and MOCVD [7.2–4] will also be discussed.

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  1. AT&T Bell Laboratories, P.O. Box 636, 07974-0636, Murray Hill, NJ, USA

    Dr. Morton B. Panish & Dr. Henryk Temkin

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© 1993 Springer-Verlag Berlin Heidelberg

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Panish, M.B., Temkin, H. (1993). Optical Properties of Quantum Wells. In: Gas Source Molecular Beam Epitaxy. Springer Series in Materials Science, vol 26. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-78127-8_7

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