Abstract
Quantum-state-resolved techniques have been applied to the laser-induced desorption (LID) of NO from Si(111). When contrasted with LID from metal substrates, where prevailing theories indicate the crucial role of the rapid screening response of the substrate, the LID results from silicon indicate the overriding importance of the localization of electronic excitations inherent to the covalent bonds of the substrate.
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Richter, L.J., Buntin, S.A., King, D.S., Cavanagh, R.R. (1993). State-Resolved Studies of the Laser-Induced Desorption of NO from Si(111): The Importance of Localized Excitations. In: Burns, A.R., Stechel, E.B., Jennison, D.R. (eds) Desorption Induced by Electronic Transitions DIET V. Springer Series in Surface Sciences, vol 31. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-78080-6_35
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DOI: https://doi.org/10.1007/978-3-642-78080-6_35
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